Infineon Technologies Ag

Catharina Pusch

Martin Schrems

Dietmar Temmler

Herbert Benzinger

Wolfram Karcher

J&uuml;rgen Faul

Martin Franosch

Reinhard Wittmann

A memory having a memory cell formed in a substrate and including a trench capacitor and a transistor and a method for producing the memory includes connecting the trench capacitor to the transistor with a self-aligned connection. The transistor at least partly covers the trench capacitor. The trench capacitor is filled with a conductive trench filling and an insulating covering layer is situated on the conductive trench filling. An epitaxial layer is situated above the insulating covering layer. The transistor is formed in the epitaxial layer. The self-aligned connection is formed in a contact trench and includes an insulation collar in which a conductive material is introduced. A conductive cap is formed on the conductive material.

Memory with trench capacitor and selection transistor and method for fabricating it

A method for the manufacture of micro-mechanical components from a stack of layers having at least a substrate, a sacrificial layer and a layer which is to be undercut includes forming at least one etch hole in the layer, which is to be undercut, and providing at least one passivation layer for controlling a selective depositing of a cover material which closes each of the etch holes after a step of etching the sacrificial layer. The passivation layer makes it possible that the undercut layer elements do not become excessively thick or grow together with the substrate due to the deposition of the cover material.

Method for the manufacture of micro-mechanical components

A method of fabricating an epitaxial layer includes providing a substrate having a substrate surface with an at least partly uncovered monocrytalline region, and at least one electrically insulating region adjoining the monocrystalline region and being at least partly surrounded by the monocrystalline region. An epitaxial layer is grown on the monocrystalline region. The electrically insulating region is at least partly overgrown laterally with the epitaxial layer, thereby forming an epitaxial closing joint above the electrically insulating region due to the overgrowth. The epitaxial layer is at least partly removed above the electrically insulating region, thereby the epitaxial closing joint is at least partly removed.

Method for fabricating epitaxy layer

Growing community of inventors

München, Germany

Catharina Pusch