Infineon Technologies Ag

Infineon Technologies Austria Ag

Technische Universitaet Graz

Caterina Travan

Martin Mischitz

Markus Heinrici

Prashanth Makaram

Peter Irsigler

Manfred Schneegans

Michael Roesner

Stephan Pindl

Friedrich Kroener

Oliver Hellmund

Cecilia Carbonelli

Joachim Hirschler

Andrew Wood

Joerg Ortner

Mathias Plappert

Michael Knabl

Alexander Zoepfl

Claudia Sgiarovello

John Cooper

Christoffer Erbert

Harald Huber

A gas sensing device includes gas sensors for generating signal samples corresponding to a concentration of a gas; a heat source for heating the gas sensors according to a first temperature profile during recovery phases and according to a second temperature profile during sense phases, a preprocessing processor for preprocessing the received signal samples; a feature extraction processor for extracting feature values from the preprocessed signal samples; a humidity processor for estimating a humidity value of the mixture of gases, including a first trained model based algorithm processor, and wherein the humidity value is based on an output of the first algorithm processor; a gas concentration processor for creating sensing results, wherein the gas concentration processor comprises a second trained model based algorithm processor, wherein the sensing results are based on output values of the second algorithm processor, and wherein the sensing results depend on the humidity value.

Gas sensing device and method for operating a gas sensing device

An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Apparatus having a functional structure delimited by a frame structure and method for producing same

According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

Method for manufacturing semiconductor devices

A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.

Methods for forming semiconductor devices and semiconductor device

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

Method of processing a porous conductive structure in connection to an electronic component on a substrate

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Villach, Austria

Caterina Travan