Stmicroelectronics S.r.l.

Ovonyx Inc.

Caterina Riva

Marco Morelli

Dario Paci

Benedetto Vigna

Lorenzo Baldo

Federico Giovanni Ziglioli

Ernesto Lasalandra

Chantal Combi

Roberto Bez

Roberto Campedelli

Giuseppe Barillaro

Stefano Losa

Manuela Magugliani

Alessandro Diligenti

Fabio Pellizzer

Bruno Murari

Giorgio Servalli

Marco Ferrera

Giovanni Frattini

Mark Andrew Shaw

Luca Fontanella

Mauro Marchi

Marco Marchesi

Romina Zonca

Paolo Iuliano

An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Method for manufacturing an integrated magnetoresistive sensor

Method for manufacturing an integrated magnetoresistive device

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Process for manufacturing a microelectromechanical interaction system for a storage medium

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Method for manufacturing an integrated magnetoresistive sensor, in particular a three-axis magnetoresistive sensor

A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.

Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device

An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Integrated magnetoresistive sensor, in particular three-axis magnetoresistive sensor and manufacturing method thereof

An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.

Integrated magnetic sensor for detecting vertical magnetic fields and manufacturing process thereof

The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.

Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof

A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.

Process for manufacturing an interaction structure for a storage medium

A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.

Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby

A portable apparatus having an accelerometer device and a supporting element in the accelerometer device, having a first body of semiconductor material integrating a sensor element that detects movements of the first body and generates a signal correlated to the detected movement; a second body of semiconductor material that integrates a conditioning electronics and that is electrically connected to the first body; and conductive bumps that provide electrical connection of the first and second bodies to the supporting element. In particular, the conductive bumps connect the first and second bodies to the supporting element without the interposition of any packaging.

Portable apparatus with an accelerometer device for free-fall detection

Described herein is an assembly of an integrated device and of a cap coupled to the integrated device; the integrated device is provided with at least a first and a second region to be fluidically accessed from outside, and the cap has an outer portion provided with at least a first and a second inlet port in fluid communication with the first and second regions. In particular, the first and second regions are arranged on a first outer face, or on respective adjacent outer faces, of the integrated device, and an interface structure is set between the integrated device and the outer portion of the cap, and is provided with a channel arrangement for routing the first and second regions towards the first and second inlets.

Assembly of an integrated device enabling a facilitated fluidic connection to regions of the device

A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the first and second thin portions being in direct electrical contact and defining a contact area having a sublithographic extension. The thin portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer; the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic opening that is used to etch a mold opening in a mold layer and filling the mold opening.

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Cusago, Italy

Caterina Riva