Micron Technology Incorporated

Qromis, Inc.

Quora Technology, Inc.

Casey R Kurth

Scott James Derner

Phillip G Wald

Patrick J Mullarkey

Daryl L Habersetzer

Jason E Graalum

Cem Basceri

Kevin Tetz

Thomas Gehrke

Scott E Sills

Martin F Schubert

Vladimir Odnoblyudov

Terry L Gilton

Scott D Schellhammer

Russ Meyer

Er-Xuan Ping

Fred D Fishburn

Hongmei Wang

Lyle D Breiner

Shenlin Chen

Brent A McClure

Debra K Gould

Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Back-to-back solid state lighting devices and associated methods

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Engineered substrates for semiconductor devices and associated systems and methods

Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electrical conductivity for the SSLE. In one embodiment, the conductors have higher thermal and electrical conductivities than the carrier substrate supporting the SSLE.

Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture

Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.

Solid state lighting dies with quantum emitters and associated methods of manufacturing

A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.

Capacitor constructions and methods of forming

Redundancy in a read only memory (ROM) embedded dynamic random access memory (DRAM) is accomplished by programming redundancy elements such as antifuses or registers with ROM data which is read instead of erroneous data. Multiple identical arrays of ROM bits can also be used for redundancy.

ROM redundancy in ROM embedded DRAM

A ROM embedded DRAM provides ROM cells that can be electrically programmed to a data state using DRAM capacitor memory cells. Numerous techniques for reading the memory cells are provided if a single state memory is desired. For example, bias techniques allow un-programmed ROM cells to be read accurately. In one embodiment, the memory includes program circuitry to short capacitor plates together by breaking down an intermediate dielectric layer using anti-fuse programming techniques.

ROM embedded DRAM with anti-fuse programming

A ROM embedded DRAM provides ROM cells that can be programmed to a single state. The ROM cells include capacitors having a storage node. The storage node is processed to have a substantially high substrate leakage. The ROM cells, therefore, are hard programmed to a logic zero state. Bias techniques can be used to read un-programmed ROM cells accurately. As described, sense amplifier circuitry can be offset in one embodiment to default to the un-programmed state. In another embodiment, bias circuitry is coupled to bit lines to favor the un-programmed state. A differential pre-charge operation can also be used in another embodiment.

Embedded ROM device using substrate leakage

Growing community of inventors

Eagle, ID, United States of America

Casey R Kurth