Hewlett-Packard Development Company, L.p.

Cary G Addington

Ravi Prasad

Jian-Gang Weng

Peter S Nyholm

David A Champion

James McKinnell

Mohammed Saad Shaarawi

Diane R Hammerstad

Qiong Chen

Omer Gila

Peter Mardilovich

Henryk Birecki

Napoleon J Leoni

Paul H McClelland

James William Stasiak

Vincent C Korthuis

Guy Adams

Si-lam Choy

Stephan R Clark

Jong-Souk Yeo

Barry T Phillips

Brad Benson

Chris Aschoff

Angus Wu

Leo C Clarke

Timothy S Hubley

Lei Zhu

Daniel I Croft

Quoc A Huynh

Shell Elaine Whittington

Man Ho Cheung

William Wren

Brian Jones

Robert Weber

Seng Teng Khor

James Mckinnell

In one example, a processor readable medium having instructions thereon that when executed cause an additive manufacturing machine to vary operating characteristics of a fusing laser beam at multiple different voxel locations in a layer of build material according to an energy dosage to be applied at each voxel location in an object slice, including multiple different energy dosages for corresponding multiple different voxel locations in the slice.

Energy dosing for additive manufacturing

Embodiments disclosed herein relate to a filter (). In one embodiment, the filter includes a pattern (). The pattern may reflect or fluoresce non-visible light.

Filter

A printhead and related fabrication method are described with the printhead including a spacer layer.

Printhead fabrication methods and printheads

In an embodiment, a pixel structure has an electrical conductor, a dielectric on the electrical conductor, a plurality of ribs on the dielectric, and a plurality of discrete protrusions protruding from a surface of each of the ribs. The plurality ribs define a plurality of compartments on the dielectric.

Pixel structures

A plurality of electrodes are electrically coupled to each other by conductive interconnects formed from selectively sintered nanoparticles.

Method to form an interconnect

In one embodiment, a device includes a first display element including: a first electrode; a transparent dielectric layer having recessed regions therein over the first electrode; a halftoned second electrode opposite the first electrode; and a fluid with colorant particles between the first electrode and the second electrode, wherein a voltage signal applied between the first electrode and the second electrode controls movement of the colorant particles such that a first voltage signal provides a clear optical state by compacting the colorant particles into the recessed regions and a second voltage signal provides a grayscale optical state by attracting the colorant particles to the second electrode.

Electronic display device providing static grayscale image

The described embodiments relate to features in substrates and methods of forming same. One exemplary embodiment can be a microdevice that includes a substrate extending between a first substrate surface and a generally opposing second substrate surface, and at least one feature formed into the first surface along a bore axis that is not transverse to the first surface.

Features in substrates and methods of forming

One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component, a lid sealed to the base, the lid including a fillport, and the fillport hermetically sealed by light irradiation.

Seal of fluid port

A method of using a flexible circuit, including attaching a first portion of the flexible circuit, via an attaching surface of the flexible circuit, to a first surface of a chip carrier. Statically bending a bending portion of the flexible circuit around an edge formed at the intersection of the first surface of the chip carrier, and a second surface of the chip carrier. Adhesively attaching a second portion of the flexible circuit, via the attaching surface, to the second surface of the chip carrier, where the second portion of the flexible circuit has at least one first anchor structure formed in the attaching surface, where the at least one first anchor structure is adapted to accept an adhesive.

Method of using a flexible circuit

A method is provided for depositing a patterning material onto an optically transparent substrate by the use of a laser beam. A solid layer of a patterning material is placed adjacent to a receiving surface of the substrate. A laser beam is directed at an incident angle between 0 and 90&#xb0; relative to the receiving surface. The laser beam is transmitted through the substrate and onto the solid layer to cause patterning material from the solid layer to deposit onto the receiving surface of the substrate.

Laser-assisted deposition

A method for laser patterning of a passive matrix organic light emitting diode device having a multilayered structure comprising a substrate and at least one light emitting organic layer disposed between two electrode layers, the method comprising the step of: irradiating areas of the multilayered structure with a laser beam in a predetermined pattern thereby causing ablation of the multilayered structure in the irradiated areas; wherein, the electrode layers and the light emitting organic layer or layers are patterned substantially simultaneously during the same irradiation operation. Also described are a passive matrix organic light emitting diode device patterned by the method of the present invention and a display comprising the same.

Method for patterning an organic light emitting diode device

Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

A method for marking a polymeric surface includes directing a first laser beam on the surface to form a lightened area on the surface and directing a second laser beam upon the lightened area to form a mark darker than the lightened area.

Laser marking

An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.

Growing community of inventors

Albany, OR, United States of America

Cary G Addington