Infineon Technologies Ag

Infineon Technologies Austria Ag

Carsten Von Koblinski

Francisco Javier Santos Rodriguez

Andre Brockmeier

Alexander Breymesser

Gerald Lackner

Markus Ottowitz

Friedrich Kroener

Thomas Feil

Tobias Polster

Martin Poelzl

Paul Ganitzer

Volker Strutz

Peter Zorn

Karin Schrettlinger

Hans-Joachim Schulze

Edward Fuergut

Roland Rupp

Manfred Engelhardt

Danny Clavette

Jochen Mueller

Ulrike Fastner

Gerhard Schmidt

Holger Woerner

Andreas Riegler

Oliver Hellmund

Ronny Kern

Daniel Kraft

Christian Gruber

Benjamin Bernard

Thomas Kalin

Udo Ausserlechner

Dirk Hammerschmidt

Joachim Mahler

Horst Theuss

Ralf Siemieniec

Hans Weber

Ivan Nikitin

Carsten Ahrens

Bernhard Goller

Thomas Grille

Thomas Aichinger

Christian Fachmann

Matteo-Alessandro Kutschak

Iris Moder

Ursula Hedenig

Uwe Hoeckele

Daniel Porwol

Tobias Schmidt

Marten Oldsen

Kamil Karlovsky

Daniel Pedone

Michael Knabl

Chiew Li Tai

Matteo Piccin

Katharina Umminger

Jia Yi Wong

Holger Doepke

Francesco Solazzi

Barbara Angela Glanzer

Claus Von Waechter

Franz Xaver Muehlbauer

Christian Schweiger

Sigrid Wabnig

Christian Altschaeffl

Robert Grünberger

Ursula Meyer

Friedrich Kroner

Wolfgang Tischner

The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.

MEMS sensor with particle filter and method for producing it

In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

Semiconductor device, semiconductor component and method of fabricating a semiconductor device

A method of manufacturing a semiconductor device includes: forming grooves in a front side surface of a wafer; filling the grooves with a first side face protection material; thinning the wafer at a backside surface of the wafer opposite the front side surface; depositing a backside metallization layer over the backside surface of the thinned wafer; and laser cutting along the grooves through the side face protection material and through the backside metallization layer to separate the wafer into multiple semiconductor devices.

Method of manufacturing semiconductor devices by filling grooves formed in a front side surface of a wafer with a side face protection material

In an embodiment, a semiconductor package includes a first transistor device having first and second opposing surfaces, a first power electrode and a control electrode arranged on the first surface and a second power electrode arranged on the second surface. A first metallization structure arranged on the first surface includes a plurality of outer contact pads which includes a protective layer of solder, Ag or Sn. A second metallization structure is arranged on the second surface. A conductive connection extending from the first surface to the second surface electrically connects the second power electrode to an outer contact pad of the first metallization structure. A first epoxy layer arranged on side faces and on the first surface of the transistor device includes openings which define a lateral size of the plurality of outer contact pads and a package footprint.

Semiconductor package and methods of manufacturing a semiconductor package

An electronic component includes a semiconductor device including a semiconductor die including a first surface, the first surface including a first metallization structure and edge regions surrounding the first metallization structure, a second surface opposing the first surface and including a second metallization structure, and side faces extending between the first surface and the second surface, wherein the edge regions of the first surface and portions of the side faces are covered by a first polymer layer, wherein the electronic component further includes a plurality of leads and a plastic housing composition, wherein the first metallization structure is coupled to a first lead and the second metallization structure is coupled to a second lead of the plurality of leads.

Composite wafer, semiconductor device and electronic component

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Method for processing a semiconductor wafer, semiconductor wafer, clip and semiconductor device

A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.

Semiconductor device having a thin semiconductor die

A connection body which comprises a base structure at least predominantly made of a semiconductor oxide material or glass material, and an electrically conductive wiring structure on and/or in the base structure, wherein the electrically conductive wiring structure comprises at least one vertical wiring section with a first lateral dimension on and/or in the base structure and at least one lateral wiring section connected with the at least one vertical wiring section, wherein the at least one lateral wiring section has a second lateral dimension on and/or in the base structure, which is different to the first lateral dimension.

Semiconductor oxide or glass based connection body with wiring structure

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

Semiconductor package devices and method for forming semiconductor package devices

A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.

Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices

A method of manufacturing a semiconductor wafer having a roughened metallization layer surface is described. The method includes immersing the semiconductor wafer in an electrolytic bath. Gas bubbles are generated in the electrolytic bath. A surface of a metallization layer on the semiconductor wafer is electrochemically roughened in the presence of the gas bubbles by applying a reversing voltage between the metallization layer and an electrode of the electrolytic bath.

Roughening of a metallization layer on a semiconductor wafer

In an embodiment, a composite semiconductor substrate includes a first polymer layer and a plurality of semiconductor dies having a first surface, a second surface opposing the first surface, side faces extending between the first surface and the second surface and a first metallization structure on the first surface. Edge regions of the first surface and at least portions of the side faces are embedded in the first polymer layer. At least one metallic region of the first metallization structure is exposed from the first polymer layer. A second metallization structure is arranged on the second surface of the plurality of semiconductor dies. A second polymer layer is arranged on edge regions of the second surface of the plurality of semiconductor dies and on the first polymer layer in regions between the side faces of neighbouring ones of the plurality of semiconductor dies.

A semiconductor element is formed in a mesa portion of a semiconductor substrate. A cavity is formed in a working surface of the semiconductor substrate. The semiconductor substrate is brought in contact with a glass piece made of a glass material and having a protrusion. The glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity. The glass piece is bonded to the semiconductor substrate. The glass piece is in-situ bonded to the semiconductor substrate by pressing the glass piece against the semiconductor substrate. During the pressing a temperature of the glass piece exceeds a glass transition temperature and the temperature and a force exerted on the glass piece are controlled to fluidify the glass material and after re-solidifying the protrusion completely fills the cavity.

Glass piece and methods of manufacturing glass pieces and semiconductor devices with glass pieces

In an embodiment, a module includes a first electronic device in a first device region and a second electronic device in a second device region. The first electronic device is operably coupled to the second electronic device to form a circuit. Side faces of the first electronic device and of the second electronic device are embedded in, and in direct contact with, a first epoxy layer.

Semiconductor module, electronic component and method of manufacturing a semiconductor module

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Villach, Austria

Carsten Von Koblinski