Texas Instruments Corporation

Qorvo US, Inc.

Ipcom Gmbh & Cokg

Carsten Hinrichsen

Søren Deleuran Laursen

Niels Ole Norholm

Lionel Pauc

Peter Jensen

The present disclosure relates to a switchable power amplification structure including a first power amplifier (PA), a second PA, a front switching structure, and an end switching structure. The front switching structure is coupled to a radio frequency (RF) input port, and the end switching structure is coupled to an antenna port. Herein, the first PA and the second PA are parallel to each other, each of which is coupled between the front switching structure and the first end switching structure. The front switching structure is configured to selectively couple the first PA and the second PA to the RF input port, while the end switching structure is configured to selectively couple the first PA and the second PA to the first antenna port.

Switchable power amplification structure

A power amplifier controller ( ) for a wireless communications device ( ), such as a wireless telephone, is disclosed. The power amplifier controller ( ) has includes controllable bias current sources ( ) coupled to Schottky diodes ( ), which are coupled to power amplifiers ( ) to sense their power output. The controllable bias current sources ( ) selectably apply one of multiple available bias currents (I I ) to their corresponding Schottky diodes ( F, R). Timing and control circuitry ( ) in the power amplifier controller ( ) receives a desired power level signal (DESPWR), and control switches (SW SW ) in the controllable bias current sources ( ) to apply a bias current (I I ) responsive to the level of power indicated by the desired power level signal (DESPWR). The power detected by Schottky diodes ( F, R) is applied to a summing adder ( ), from which a control signal (VAPC) is derived and used to control the output of the power amplifiers ( ). The controllable bias currents (I I ) permit the power output to be selectably sensed with high dynamic range or high sensitivity, depending upon the power level to be applied.

Selectable diode bias for power amplifier control in a wireless telephone handset

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Aalborg, Denmark

Carsten Hinrichsen