Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Carolus Ida Maria Antonius Spee

Vadim Yevgenyevich Banine

Johannes Hubertus Josephina Moors

Harm-Jan Voorma

Maarten Marinus Johannes Wilhelmus Van Herpen

Timotheus Franciscus Sengers

Derk Jan Wilfred Klunder

Vladimir Vitalevitch Ivanov

Arjen Boogaard

Alexander Matthijs Struycken

Klaas Timmer

Josephus Jacobus Smits

Wilhelmus Sebastianus Marcus Maria Ketelaars

Lambertus Adrianus Van Den Wildenberg

Johannes Bernardus Ridder

Vladimir Mihailovitch Krivtsun

Aleksey Yurievich Kolesnychenko

Levinus Pieter Bakker

Ralph Kurt

Mark Kroon

Bastiaan Theodoor Wolschrijn

Vladimir Mikhailovich Krivtsun

Johannes Adrianus Antonius Theodorus Dams

Johannes Christiaan Leonardus Franken

Arnoud Cornelis Wassink

Adrianus Johannes Petrus Maria Vermeer

Diederik Jan Maas

Paulus Wilhelmus Maria Blom

Paul Peter Anna Antonius Brom

Peter Cornelis Zalm

Axel Sebastiaan Lexmond

Bob Van Someren

Antonie Ellert Duisterwinkel

Antonius Maria Bernardus De Mol

Rik Jansen

Jack W Levell

Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.

Apparatus and method for atomic layer deposition

The present invention is directed to a method of manufacturing a multilayer semiconductor element. According to this method a first device layer is provided on a carrier by solution printing of a first material on the carrier. A second device layer is provided by solution printing of a second material solution on said first device layer; the second material solution comprising second device layer material dissolved in a solvent. Prior to solution printing of the second device layer, a barrier interlayer is added onto the first layer for being arranged in between said first and said second device layer. The barrier interlayer comprises an interlayer material insoluble to said solvent, and arranged for enabling electric interaction between the first and second device layer. The invention further provides a semiconductor element.

Method of manufacturing a multilayer semiconductor element, and a semiconductor element manufactured as such

An extreme ultraviolet exposure apparatus includes a radiation system configured to supply a beam of extreme ultraviolet radiation; a support configured to support a patterning device, the patterning device configured to pattern the beam of extreme ultraviolet radiation according to a desired pattern; a substrate table having an area configured to support a substrate; a projection system configured to project the patterned beam of extreme ultraviolet radiation onto a target portion of the substrate, the projection system comprising a reflective optical system; wherein at least a part of the apparatus that during use of the apparatus is exposed to the beam of extreme ultraviolet radiation is coated with a coating, the coating comprising a metal oxide, or a photocatalyst, or a semiconductor, or any combination thereof.

Exposure apparatus

A collector assembly with a radiation collector, a cover plate and a support member connecting the radiation collector to the cover plate are provided. The cover plate is designed to cover an opening in a collector chamber. The collector chamber opening may be large enough to pass the radiation collector and the support member. The removed radiation collector can be cleaned with different cleaning procedures, which may be performed in a cleaning device. Such cleaning device may for example consist of the following: a circumferential hull designed to provide an enclosure volume for circumferentially enclosing at least the radiation collector; an inlet configured to provide at least one of a cleaning gas and a cleaning liquid to the enclosure volume to clean at least said radiation collector; and an outlet configured to remove said at least one of said cleaning gas and said cleaning liquid from the enclosure volume.

Ex-situ removal of deposition on an optical element

An exposure apparatus includes a radiation system configured to supply a projection beam of radiation, and a patterning device configured to pattern the projection beam according to a desired pattern. The apparatus includes a substrate table having an area configured to support a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate. At least a part of the apparatus that during use of the apparatus is exposed to radiation is coated with a coating. The coating includes a metal oxide, or a photocatalyst, or a semiconductor, or any combination thereof.

A method of preparing components for use in a vacuum chamber of a lithographic apparatus is disclosed. The method includes coating the component with a non-metallic material. The method may further include treating the coating so as to harden the coating. Preferably, the coating material is a hydrogen silsesquioxane (HSQ), which may be applied via spraying, brushing, or spinning and can be treated by heating or by irradiation with an electron beam. The resulting components strongly reduce outgassing of water and hydrocarbons when subjected to a vacuum environment.

Method of preparing components, prepared component, lithographic apparatus and device manufacturing method

An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second type of gas to a space adjacent the surface. Particles of the first and second types of gas are capable of reacting with the surface, when activated by the radiation beam. The gas source is configured to generate a combination of surface occupation numbers of molecules of the first and second types of gas on the surface under operating conditions, at least prior to pulses of the radiation beam, the combination of surface occupation numbers lying in a range in which reactions of particles with the surface during pulses of the radiation beam are in majority reversed.

Optical apparatus, lithographic apparatus and device manufacturing method

A method for removal of deposition on a radiation collector of a lithographic apparatus includes providing a gas barrier to an end of a radiation collector, thereby providing a radiation collector enclosure volume; providing a gas to the enclosure volume, the gas selected from a halogen containing gas and a hydrogen containing gas; and removing at least part of the deposition from the radiation collector. A lithographic apparatus includes a radiation collector; a circumferential hull enclosing the radiation collector; a gas barrier at an end of the radiation collector, thereby providing a radiation collector enclosure volume. The radiation collector is enclosed by the circumferential hull and the gas barrier. An inlet provides a gas to the radiation collector enclosure volume and an outlet removes a gas from the radiation collector enclosure volume.

Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby

A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an Hcontaining gas and one or more additional compounds selected from the group of hydrocarbon compounds and silane compounds in at least part of the apparatus includes producing hydrogen radicals from Hfrom the Hcontaining gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus

A coating for sensors and/or parts of an exposure apparatus, for example a sensor on a substrate table of a lithography apparatus, include a semiconductor, a photocatalyst, and/or a metal oxide.

Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby

A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an Hcontaining gas in at least part of the apparatus includes producing hydrogen radicals from Hfrom the Hcontaining gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

A device manufacturing method is disclosed. The method includes patterning a beam of radiation with a patterning device, projecting the patterned beam of radiation onto a target portion of a substrate, supplying a chemical reagent to a chamber that holds the patterning device and/or the substrate, and removing water from the chamber with use of the chemical reagent.

Device manufacturing method and a lithographic apparatus

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Helmond, Netherlands

Carolus Ida Maria Antonius Spee