Other

Stmicroelectronics S.a.

France Telecom

Stmicroelectronics (rousset) Sas

France T&eacute;l&eacute;com

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Caroline Hernandez

Daniel Bensahel

Yves Campidelli

Maurice Rivoire

Fran&ccedil;ois Martin

Michel Haond

Laurent J Vallier

J&eacute;r&ocirc;me Alieu

A method for treating a surface is disclosed. According to some aspects, the method includes ejecting matter from the surface by projecting an ejection agent on the surface. The ejection agent is selected from gases, fluids in supercritical state, solid materials in divided form, solid materials in a gas vector and electromagnetic radiation. The method includes trapping the ejected matter in one or several pieces of an aerogel situated on trajector of the ejected matter. A device for carrying out this method as well as the use of an aerogel to trap the matter ejected from a surface during a treatment of that surface are also disclosed. The method may be applied in fields including cleaning, satinizing, polishing, deburring, etching, marking, pre-adhesion surface preparation metallization enameling, painting or varnishing operations are done, in particular electronics, microelectronics, optics, optoelectronics, bijouterie, jewelry, and the restoration of art and antiques.

Method and device for treating a surface

A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Method of manufacturing a semiconductor wafer comprising an integrated optical filter

A method manufactures a digital image sensor including at least one optical lens using a hardenable liquid or gelatinous material. The method includes depositing a calibrated volume of the material on a lens formation base using a tubular needle of a small diameter, so that the volume of material deposited has at least one convex part under the effect of interface energies, and hardening all or part of the volume of deposited material.

Method for manufacturing lenses, in particular for CMOS imager

A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing the a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Imager system comprising an integrated optical filter arranged between an imager and a transparent plate

A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites is also described. The invention may be used to provide devices having layers of planes of quantum drops.

Method for making a device comprising layers of planes of quantum dots

Method for treating a silicon substrate, by nitriding, to form a thin insulating layer

The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T of 400 to 500&deg; C.; (b) chemical vapour deposition (CVD) of germanium at said first predetermined temperature T until a base germanium layer is formed on the substrate, with a predetermined thickness less than the desired final thickness; (c) increasing the CVD temperature from said first predetermined temperature T up to a second predetermined temperature T of 750 to 850&deg; C.; and (d) carrying on with CVD of germanium at said second predetermined temperature T until the desired final thickness for the monocrystalline germanium final layer is obtained. The invention is useful for making semiconductor devices.

Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained

A MOSFET transistor comprising a gate made of silicon-germanium alloy, formed on a single crystal silicon substrate by means of a thin insulating layer, and drain and source regions implanted in the substrate on each side of the gate, characterized in that the gate comprises side regions presenting an increasing germanium percentage towards the sides of the gate facing the drain and source regions. Advantage: compensation of the short channel effect by locally decreasing the work function of the gate material near the drain and source regions.

MOSFET transistor with short channel effect compensated by the gate material

The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450&deg; C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained

Process for fabricating a planar heterostructure

Process for nitriding the gate oxide layer of a semiconductor device and device obtained

A method which includes, prior to depositing the encapsulating silicon layer: A) depositing on the Si,Ge,layer a thin film of amorphous or polycrystalline silicon, then in treating said silicon film with gas nitric oxide at a temperature between 450 to 600&deg; C. and at a pressure level of 10,to 10,Pa to obtain a thin nitrided silicon film; or B) depositing on the Si,Ge,layer a thin film of amorphous or polycrystalline silicon and oxidizing the silicon film to form a surface film of silicon oxide less than 1 nm thick and optionally treating the oxidized amorphous or polycrystalline silicon film with nitric oxide as in A). The invention is applicable to CMOS semiconductors.

Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate

The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450.degree. C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

Growing community of inventors

Grenoble, France

Caroline Hernandez