Imec Vzw

Universiteit Gent

Katholieke Universiteit Leuven

Carolina Mora Lopez

Alexandru Andrei

Peter Peumans

Veronique Rochus

Dries Braeken

Srinjoy Mitra

Marco Ballini

Veerle Reumers

Luc Martens

Didac Gomez Salinas

Denys Nikolayev

Wout Joseph

Aaron Delahanty

Bart Weekers

Emmeric Tanghe

A method includes providing a first electrically conductive element over a top surface of a substrate. The method includes measuring at least one parameter indicative of the shape or dimensions of the first electrically conductive element. The method includes simulating the first electrically conductive element and a dielectric wall surrounding the first electrically conductive element for a plurality of wall heights by using the at least one parameter as an input. The method includes for each wall height, computing the maximum current density present at a surface of the first electrically conductive element. The method includes determining, from the maximum current densities, wall height(s) for which the maximum current density is below a threshold. Furthermore, the method includes providing a second electrically conductive element, identical to the first electrically conductive element, surrounded by a wall having a wall height of the determined wall height(s).

Method for manufacturing an electrode

A semiconductor cell culture device for three-dimensional cell culture comprises: a semiconductor material layer in which a cell culture portion of semiconductor material is defined, wherein the cell culture portion defines an area within the semiconductor material layer surrounded by semiconductor material, wherein the cell culture portion comprises a mesh structure having island structures being interconnected by bridge structures and defining through-pores between the island structures allowing for selective transport of cell constructs, cellular components, proteins or other large molecules through the semiconductor material layer and on opposite sides of the cell culture portion in the semiconductor material layer, and a supporting structure connected to the cell culture portion.

Semiconductor cell culture device and a system for three-dimensional cell culture

A device for analysis of cells comprises: an active sensor area () presenting a surface for cell growth; a microelectrode array () comprising a plurality of pixels () in the active sensor area (), wherein each pixel () comprises at least one electrode () at the surface, wherein each pixel () is configured to control the configuration of the pixel circuitry and set a measurement modality of the pixel; recording circuitry having a plurality of recording channels (), wherein each pixel () is connected to a recording channel (), wherein each recording channel () comprises a reconfigurable component (), which is selectively controlled between being set to a first mode, in which the reconfigurable component () is configured to amplify a received pixel signal, and being set to a second mode, in which the reconfigurable component () is configured to selectively pass a frequency band of the received pixel signal.

Device and a method for analysis of cells

An electrode arrangement for stimulating and recording electrical signals in biological matter comprises:

Electrode arrangement for stimulating and recording electrical signals in biological matter, a neural probe, a micro-electrode array and a method for controlling an electrode arrangement

A pseudo-resistor structure, comprises: a first and a second PMOS transistor or PN diode configured as two-terminal devices, wherein the positive terminal of the first PMOS transistor or PN diode is connected to the positive terminal of the second PMOS transistor or PN diode, and wherein the negative terminal of the first PMOS transistor or PN diode is connected to an input (A) of the pseudo-resistor structure and wherein the negative terminal of the second PMOS transistor or PN diode is connected to an output (C) of the pseudo-resistor structure, and a dummy transistor or dummy diode connected to the input (A), wherein the dummy transistor or dummy diode is further connected to a bias voltage for compensating a leakage current through the first and the second PMOS transistors or PN diodes. A closed-loop operational amplifier circuit comprising the pseudo-resistor structure is provided. Also, a bio-potential sensor comprising the closed-loop operational amplifier circuit is provided.

Pseudo-resistor structure, a closed-loop operational amplifier circuit and a bio-potential sensor

An amplifier circuit, a voltage sensing apparatus, and an amplification method are disclosed. The amplifier circuit comprises (1) an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and (2) a processing stage comprising a second set of transistors for processing the signal from the input stage and generating an output signal. The transistors of the first set have a thicker gate oxide than the transistors of the second set, and are therefore suitable for higher voltage operation. The first and second sets of transistors are supplied by the same voltage supply of the amplifier circuit. The semiconductor body of the first set of transistors is connected to a reference potential to lower the threshold voltage.

Small signal amplifier

Growing community of inventors

Leuven, Belgium

Carolina Mora Lopez