International Business Machines Corporation

Texas Instruments Corporation

Globalfoundries Inc.

Carole D Graas

Fen Chen

Pascal A Nsame

Jeffrey P Gambino

Wen Liu

Nazmul Habib

Emmanuel Yashchin

Ernest Y Wu

John Greg Massey

Deborah M Massey

Prakash Periasamy

Mukta G Farooq

Xiao Hu Liu

Robert H Havemann

Timothy Dooling Sullivan

Keith Aelwyn Jenkins

Alvin Wayne Strong

Ronald Gene Filippi, Jr

Kevin Geoffrey Stawiasz

Michael Ruprecht

Deborah Tibel

Larry Ting

A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.

Optimization of integrated circuit reliability

Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.

Moisture detection and ingression monitoring systems and methods of manufacture

Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.

Thru-silicon-via structures

Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit.

Circuits and methods are provided for a reliability, availability and serviceability (RAS) enabled and self-regulated frequency and delay sensor of a semiconductor. A circuit for measuring and compensating for time-dependent performance degradation of an integrated circuit, includes at least one critical functional path of the integrated circuit, and Wearout Isolation Registers (WIR's) connected to boundaries of the critical functional path. The circuit also includes a feedback path connected to the WIR's, and a sensor control module operable to disconnect the critical functional path from preceding and succeeding functional paths of the integrated circuit, connect the critical functional path to the feedback path to form a critical path ring oscillator (CPRO), and enable the CPRO to generate an operating signal. A delay sensor module is operable to measure a frequency of the operating signal to determine and compensate for a degradation of application performance over a lifetime of a semiconductor product.

Circuit and method for RAS-enabled and self-regulated frequency and delay sensor

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Jericho, VT, United States of America

Carole D Graas