Rca Inc.

Carmine J Gentile

Nicholas Kucharewski

Robert C Croes

Melvin L Hagge

A voltage dropping element is connected in series with the conduction paths of first and second IGFETs, of complementary conductivity, between first and second terminals coupled to first (e.g. 5 volts) and second (e.g. 0 volt) voltage levels, respectively. The gates of the IGFETs are connected to an input terminal to which is applied TTL level signals (e.g. 0.4 to 2.4 volts) and their drains are connected to an output node. When the 'high' TTL level (e.g. 2.4 volt) is present, the voltage dropping element reduces the effective gate-to-source voltage (V.sub.GS) of the first IGFET, reducing its conductivity, increasing its effective impedance substantially, and enabling the second IGFET to drive the output node to the second voltage level with little power dissipation. When the 'low' TTL input (e.g. 0.4 volt) is present, the second IGFET is turned-off while the first IGFET is turned-on, driving the output node to the voltage at the first power terminal less the voltage drop of the voltage dropping element. A regenerative latch circuit connected to the output node senses the turn-on of the first IGFET and couples the output node to the voltage at the first power terminal eliminating the voltage offset at the output node due to the voltage dropping element.

Level shift interface circuit

A gated oscillator is disclosed wherein the first period of oscillation is substantially equal to the steady state period of oscillation. The gated oscillator is of the type wherein oscillations are produced by charging and discharging a capacitor between respective first and second voltage levels. When the oscillator is stopped, the capacitor potential is maintained at the first voltage level, so that when the oscillator is started, the capacitor begins its charging cycle at the first voltage level.

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Hightstown, NJ, United States of America

Carmine J Gentile