Micron Technology Incorporated

Stmicroelectronics S.r.l.

Carmela Cupeta

Fabio Pellizzer

Andrea Redaelli

Giorgio Servalli

Roberto Somaschini

Paolo Giuseppe Cappelletti

Paolo Colpani

Cristina Casellato

Michele Magistretti

Francesco Maria Pipia

Ivan Venegoni

Samuele Sciarrillo

Nicola Nastasi

Simone Bossi

A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.

Redistribution layer and integrated circuit including redistribution layer

Method of manufacturing a redistribution layer, redistribution layer and integrated circuit including the redistribution layer

Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.

Memory cells, memory arrays, and methods of forming memory cells and arrays

Methods of forming memory cells

Memory arrays having confined phase change material structures laterally surrounded with silicon nitride

Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.

Semiconductor constructions and methods of forming memory cells

A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines in the array by forming a metallization in the periphery and the array at the same time using the same metal deposition. The metallization may form row lines in the array.

Resistive random access memory

Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.

Combined conductive plug/conductive line memory arrays and methods of forming the same

Methods of forming memory cells and arrays

Growing community of inventors

Milan, Italy

Carmela Cupeta