International Business Machines Corporation

Other

Hoechst Celanese Corporation

Clariant Finance (bvi) Limited

Carlton G Willson

Scott Arthur MacDonald

Robert Dennis Miller

Hiroshi Ito

Dennis R McKean

Jean M Frechet

Nicholas J Clecak

Robert David Allen

Robert J Twieg

William D Hinsberg, Iii

Hiroyuki Hiraoka

Barbara D Grant

Terry C Tompkins

Ralph R Dammel

Gregory Michael Wallraff

Richard Vicari

Willard E Conley

Hubert Schlosser

George J Hefferon

Ming-Fea Chow

Lester A Pederson

Douglas J Gordon

James F Cameron

Ranee W Kwong

Harbans S Sachdev

Milton Russell Latta

Daniel Joseph Dawson

Ajay Prabhakar Giri

William R Brunsvold

Anthony Juliana

Donald Clifford Hofer

Jeffrey W Labadie

James Hsi-Tang Lee

Logan L Simpson

Leo L Linehan

Peter A Agostino

Kaolin N Chiong

Kantilal Jain

Anders Hult

Webster E Howard

Jer-Ming Yang

Dale M Crockatt

Nancy E Iwamoto

Ying Ying Cheng

Claus-Peter Niesert

Man-Kit Leung

Glenn V Sincerbox

Joseph G Walsh

A polymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.

Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene

The present invention relates to an improved lithographic photoresist composition comprising a photosensitive base generator. The composition is useful in the manufacture of integrated circuits.

Photoresist composition with photosensitive base generator

A copolymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl and wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.

Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in

Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.

Dry developable photoresist compositions and method for use thereof

Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.

Spin on oxygen reactive ion etch barrier

The present invention relates to a process for negative tone imaging of photoresist to improve resolution of lithographic patterns.

Process for imaging of photoresist including treatment of the

A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.

Photoacid generating composition and sensitizer therefor

The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

Thermally stable photoresists with high sensitivity

A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.

Method of creating patterned multilayer films for use in production of

Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0.sup.2,6 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

O-quinone diazide sulfonic acid monoesters useful as sensitizers for

The present invention is concerned with methods of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Top imaged resists

Heat stable, negative resist compositions are provided for use, particularly in deep ultraviolet light X-ray and electron beams. The composition comprises an acid generating onium salt photoinitiator, a source of polyfunctional activated aromatic rings and a source of polyfunctional carbonium ions, with at least one of said sources being a polymer.

Negative resist compositions

A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.

Process for making self-aligning thin film transistors

The reactive ion etching and thermal flow resistance of a resist image is enhanced by contacting the resist image with an alkyl metal compound of magnesium or aluminum.

Process for enhancing the resistance of a resist image to reactive ion

A positive tone photoresist is obtained without a solvent development step. The resist is a polymer containing masked reactive functionality which is imagewise exposed to unmask the functionality then treated with a non-organometallic reagent to remask that functionality. Following flood exposure, the resist is treated with an organometallic reagent containing an element which forms a non-volatile oxide. It is then developed by means of oxygen reactive ion etching.

Positive tone oxygen plasma developable photoresist

Growing community of inventors

San Jose, CA, United States of America

Carlton G Willson