Olympus Optical Company, Ltd.

Symetrix Corporation

Delphi Technologies, Inc.

Ramtron Corporation

Carlos P De Araujo

Larry D McMillan

Hitoshi Watanabe

Takashi Mihara

Hiroyuki Yoshimori

Joseph V Mantese

Jolanta Bozena Celinska

Adolph L Micheli

Alfred P Gnadinger

Norman William Schubring

Ross Lyndon-James

Donald L Black

A pyroelectric sensor for determines a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry is employed to measure the charge from the scene element. The ferroelectric of the scene element is made of strontium bismuth tantalate, or derivative thereof, disposed directly between top and bottom electrodes. The polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.

Pyroelectric sensor

An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tungsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the ferroelectric layer and the source drain. The barrier layer may act as the bottom electrode of the ferroelectric capacitor, or a separate bottom electrode made of platinum may be used. In another embodiment in which the barrier layer forms the bottom electrode, an oxide layer less than 5 nm thick is located between the barrier layer and the ferroelectric layer and the barrier layer is made of silicon, silicide, or polycide. A thin silicide layer forms and ohmic contact between the barrier layer and the source/drain. The capacitor and the barrier layer are patterned in a single mask step. The ends of the capacitor are stepped or tapered. In another embodiment both the bottom and top electrode may be made of silicon, silicide, polycide or a conductive oxide, such as indium tin oxide, tin dioxide, or ruthenium oxide.

Ferroelectric integrated circuit

Process for fabricating ferroelectric integrated circuit

A wristwatch contains communication and memory circuitry and a transmitter. The memory circuit stores a personal identification number of a single user. The communication and memory circuitry is driven by the same battery which powers the timekeeping structure of the watch. A transmitter transmits data from the reader to the wristwatch, placed proximate thereto. The reader has a keypad by which the user can enter a personal identification number, and the watch compares the transmitted number to the user-entered number. If the numbers match, a transaction may occur.

Timepiece communication system

Growing community of inventors

Colorado Springs, CO, United States of America

Carlos P De Araujo