Other

Carlos Mazur&eacute;

Christine Dehm

Stephen K Loh

Methods and apparatus for fabricating stacked capacitor structures, which include barrier layers, are disclosed. According to one aspect of the present invention, a method for reducing outdiffusion within an integrated circuit includes forming a gate oxide layer over a substrate, and further forming a silicon plug over a portion of the gate oxide layer. A silicon dioxide layer is then formed over the gate oxide layer, and is arranged around the silicon plug. A first barrier film is formed over the silicon plug, and a dielectric layer is formed over the silicon dioxide layer. In one embodiment, forming the first barrier film includes forming a first oxide layer over the silicon plug, nitridizing the first oxide layer, and etching the nitridized first oxide layer.

Growing community of inventors

Zorneding, Germany

Carlos Mazuré

Growing community of inventors

Zorneding, Germany

Carlos Mazur&eacute;

Carlos Mazuré