Quantum Semiconductor LLC

Carlos Augusto

A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG) and a source mid-gap value (EGM), the source layer having a source Fermi-Level (EF). A drain layer has a drain Fermi-Level (EF). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG) and a channel mid-gap value (EGM), the channel layer having a channel Fermi-Level (EF). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF). A gate electrode has a gate electrode Fermi-Level (EF). The source band-gap is substantially narrower (EG) than the channel band-gap (EG). The source contact Fermi-Level (EF), the source Fermi-Level (EF), the channel Fermi-Level (EF), the drain Fermi-Level (EF) and the gate electrode Fermi-Level (EF) are equal to the source mid-gap value (EGM) and the channel mid-gap value (EGM), within a predetermined tolerance value, when no voltage is applied to the device.

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Lisboa, Portugal

Carlos Augusto