University of Massachusetts

Carlos A Gil

Samson Kh Mil'shtein

A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device when a voltage is applied to its gate. The drain region of the device can be disposed aside the gate region on a common surface of the semiconductor substrate. The source region of the device also can be disposed adjacent to the substrate but on a side of the semiconductor substrate opposing the drain and/or gate regions. Based on this topology, a transistor device can be fabricated with a buried source to enhance its operating characteristics such as switching speed.

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Billerica, MA, United States of America

Carlos A Gil