Stmicroelectronics S.r.l.

Carlo Magro

Giuseppe Palmisano

Egidio Ragonese

Nunzio Spina

Crocifisso Marco Antonio Renna

Antonino Scuderi

Domenico Murabito

Barbaro Marano

Giuseppe Morale

Tiziana Cuscani

A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

Superjunction power device and manufacturing method

A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.

Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device

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San Giovanni la Punta, Italy

Carlo Magro