Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Aledia

Carlo Cagli

Xavier Hugon

Christophe Bouvier

Tiphaine Dupont

Philippe Gibert

Emilie Pougeoise

Nacer Aitmani

Laurent Grenouillet

Erwan Dornel

Olivier Girard

Olivier Billoint

Brigitte Soulier

Vincent Beix

Marion Volpert

Thomas Lacave

Denis Renaud

Giorgio Anania

A random number generator circuit includes a noise source capable of providing a noise signal that varies randomly; and a circuit for extracting the noise signal including an edge detector configured to produce from the noise signal an analogue signal including voltage pulses, each voltage pulse corresponding to a rising or falling edge of the noise signal, and an analogue-to-digital converter configured to generate a random bit sequence from the analogue signal.

Random number generator circuit

A memory circuit includes a plurality of memory cells, each memory cell including a resistive memory element and a selection transistor of the FDSOI type connected in series with the resistive memory element. The selection transistor includes a channel region, a buried insulating layer, a back gate separated from the channel region by the buried insulating layer. The memory circuit further includes a circuit for biasing the back gate of the selection transistors, the biasing circuit being configured to apply a forward back-bias to the selection transistor of at least one memory cell during a programming or initialisation operation of the at least one memory cell.

Memory circuit comprising a plurality of 1T1R memory cells

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Method for producing optoelectronic devices comprising light-emitting diodes

An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Opto-electronic device with light-emitting diodes

An electroluminescent device comprises a structure comprising a set of nanowires on the surface of a substrate, comprising: a first series of primary so-called emission nanowires (NTi) comprising nanowires connected to first electrical contacts and capable of emitting light under the action of a forward first voltage from a forward voltage or current source; a second series of secondary detection nanowires (NTi) adjacent to the primary nanowires, connected to second electrical contacts and capable of generating a photocurrent under the action of an ambient light and/or of a portion of the light emitted by some of the primary nanowires, under the control of a second reverse voltage, from a voltage or current source; means for controlling the forward voltage as a function of the photocurrent. A method for controlling the luminance of an electroluminescent device is provided.

Electroluminescent device with integrated sensor and method for controlling the emission of the device

A method for reading an electronic memory device including N memory cells Ci with 1&#x2267;i&#x2267;N and N&#x2267;2, each cell Ci having a resistance Ri, the method including for each cell Ci, determining a set Ei of resistance values capable of being associated with the resistance Ri of the cell Ci; for each combination of N variables Vi, each variable Vi taking successively each resistance value among the predetermined set Ei, applying a mathematical function to the combination to obtain a resulting resistance value; for each combination of N variables Vi, associating a logic state of the electronic memory device with the resulting resistance value obtained previously, according to a comparison of the resulting resistance value with a same threshold resistance value; associating a resistance value with each resistance Ri to obtain a particular combination of N variables Vi; determining the logic state of the electronic memory device.

Method of reading an electronic memory device including a plurality of memory cells of resistive random access memory type

A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided.

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Grenoble, France

Carlo Cagli