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Sandia Corporation

The United States of America as Represented by the Department of Energy

Carleton H Seager

Michael B Sinclair

Robert A Anderson

Jerrold A Floro

Eric H Chason

Joseph Tate Evans, Jr

Apparatus for measuring curvature of a surface wherein a beam of collimated light is passed through means for producing a plurality of parallel light beams each separated by a common distance which then reflect off the surface to fall upon a detector that measures the separation of the reflected beams of light. This means can be an etalon and the combination of a diffractive element and a converging lens. The curvature of the surface along the line onto which the multiple beams fall can be calculated from this information. A two-dimensional map of the curvature can be obtained by adding a second etalon (or a second combination of a diffractive element and a converging lens) which is rotated 90.degree. about the optical axis relative to the first etalon and inclined at the same angle. The second etalon creates an individual set of parallel light beams from each of the individual beams created by the first etalon with the sets of parallel light beams from the second etalon rotated 90.degree. relative to the line onto which the single set of parallel beams from the first etalon would have fallen.

Measurement of the curvature of a surface using parallel light beams

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Method for restoring the resistance of indium oxide semiconductors after

An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

Micromachined silicon electrostatic chuck

Growing community of inventors

Albuquerque, NM, United States of America

Carleton H Seager