Applied Materials, Inc.

Carlaton Wong

Timothy Joseph Franklin

Adam J Fischbach

Canfeng Lai

Rajinder Dhindsa

Tsutomu Tanaka

Anwar Husain

Xue Chang

Khokan Chandra Paul

Alexander Sulyman

Vijet Patil

Kartik Ramaswamy

Abhijit Basu Mallick

Pramit Manna

James Rogers

Eswaranand Venkatasubramanian

Steven E Babayan

Kien Nai Chuc

Daniel Sang Byun

Ravikumar Patil

Edward L Haywood

Reyn Wakabayashi

Stephen Charles Garner

Michael Andrew Stearns

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.

Semiconductor processing chambers and methods for deposition and etch

Embodiments of showerheads are provided herein. In some embodiments, a showerhead assembly includes a chill plate having a plurality of recursive gas paths and one or more cooling channels disposed therein, wherein each of the plurality of recursive gas paths is fluidly coupled to a single gas inlet extending to a first side of the chill plate and a plurality of gas outlets extending to a second side of the chill plate; and a heater plate coupled to the chill plate, wherein the heater plate includes a plurality of first gas distribution holes extending from a top surface thereof to a plurality of plenums disposed within the heater plate, the plurality of first gas distribution holes corresponding with the plurality of gas outlets of the chill plate, and a plurality of second gas distribution holes extending from the plurality of plenums to a lower surface of the heater plate.

Showerhead assembly with recursive gas channels

An apparatus for processing substrates that includes a process chamber with a process volume and a conductance liner surrounding the process volume wherein the conductance liner has at least one fixed portion and a movable portion. The movable portion is configured to expose a substrate transfer slot in a wall of the process chamber. The apparatus also includes a lifting assembly with an actuator attached to the movable portion of the conductance liner. The lifting assembly is configured to move the movable portion of the conductance liner in a vertical direction to expose the substrate transfer slot.

Methods and apparatus for conductance liners in semiconductor process chambers

Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a plurality of planar coils, a first power supply circuit coupled to at least two of the plurality of planar coils, a concentric coil region at least partially surrounding the planar coil region, and a second power supply circuit coupled to at least two of a plurality of concentric coils. The first power supply circuit may be configured to bias the at least two of the plurality of planar coils to affect a plasma in a center region of the plasma processing chamber, and the second power supply circuit may be configured to bias the at least two of the plurality of concentric coils to affect the plasma in an outer region.

Plasma uniformity control system and methods

Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

Lift pin mechanism

A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.

Thread profiles for semiconductor process chamber components

Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest against an electrostatic chuck; an upper guide comprising a top end, a bottom end, and a first opening extending from the top end to the bottom end, wherein the shaft is disposed and axially movable through the first opening; a lower guide comprising a top end, a bottom end, and a second opening and a third opening extending from the top end to the bottom end, wherein the third opening is larger than the second opening, and wherein the shaft is disposed and axially movable through the second opening and the third opening; and a biasing mechanism coupled to the shaft and configured to bias the lift pin against the electrostatic chuck.

Lift pin assembly

Semiconductor processing chambers for deposition and etch

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

Substrate processing chamber

Radio frequency conduit

Growing community of inventors

Sunnyvale, CA, United States of America

Carlaton Wong