Globalfoundries U.S. Inc.

Advanced Mask Technology Center Gmbh + Co. Kg

Carla Byloos

Dominique Savignac

Rainer Pforr

Holger S Schuehrer

Dirk Breuer

Molela Moukara

Christoph Noelscher

Roderick Koehle

Nicolo Morgana

Oliver M Witnik

Ralf Neubauer

Haiko Rolff

Disclosed are embodiments of a back end of the line (BEOL) metal structure that includes, within a metal level, a metal via, which has at least eight sides and all interior angles at 135&#xb0; or more, and a metal wire thereon. The metal wire and via include respective portions of a continuous conformal metal layer. A passivation layer coats the top surface of the metal layer. The metal via and the metal wire thereon can be in an upper metal level and can be made of one metal (e.g., aluminum or an aluminum alloy). The upper metal level can be above a lower metal level that similarly includes a metal via and metal wire thereon, but the metal used can be different (e.g., copper) and/or the shape of the via can be different (e.g., four-sided). Also disclosed herein are method embodiments for forming the above-described BEOL metal structure.

Back end of the line metal structure and method

A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.

Lithographic mask and method of forming a lithographic mask

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Dresden, Germany

Carla Byloos