International Business Machines Corporation

Carla A Bailey

Charles Leon Arvin

Krystyna Waleria Semkow

Brian Richard Sundlof

Harry David Cox

Srinivasa S N Reddy

Hsichang Liu

Arthur Gilman Merryman

Robert L Baan

Robert Paul Katz

Vladimir Jambrih

Camille Proietti Bowne

Hua Gan

Vall F McClean

A chemical etchant containing hydrogen peroxide and phosphate ions at a controlled pH is provided for selectively etching metals in the presence of one or more metals not to be etched. The etchant is useful in the fabrication of semiconductor components particularly for forming capture pads where TiW is used as a barrier layer for a copper, copper/nickel pad, or copper/nickel alloy pad. A commercial hydrogen peroxide solution is preferred to which has been added phosphoric acid as a source of phosphate ions and KOH as the pH adjuster.

Selective etch of TiW for capture pad formation

Apparatus for Scanning Acoustic Microscopy (SAM) of a semiconductor device including a substrate with an acoustic probe, The substrate has upper and lower surfaces. A sealed lower space provides an environment surrounding the lower surface. An upper ring structure formed above the upper surface includes an upper sealing ring in contact with the upper surface, with the upper sealing structure and the seal forming a dam for retaining the acoustic transmission fluid above the upper surface. A fixture base retains a lower sealing ring in contact with the lower surface surrounding the lower surface. An acoustic scanning probe positioned confronting the upper surface of the semiconductor device extending into the acoustic transmission fluid retained in contact with the upper surface.

Slip ring positive Z force liquid isolation fixture permitting zero net force on workpiece

One embodiment of the present invention is directed to an under bump metallurgy material. The under bump metallurgy material of this embodiment includes an adhesion layer and a conduction layer formed on top of the adhesion layer. The under bump metallurgy material of this embodiment also includes a barrier layer plated on top of the conduction layer and a sacrificial layer plated on top of the barrier layer. The conduction layer of this embodiment includes a trench formed therein, the trench contacting a portion of the barrier layer and blocking a path of intermetallic formation between the conduction layer and the sacrificial layer.

Intermetallic diffusion block device and method of manufacture

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Poughkeepsie, NY, United States of America

Carla A Bailey