International Business Machines Corporation

Carl Zinoni

Rolf Allenspach

The invention is directed to a method of manufacturing a ferromagnetic device (), having an elongated structure extending along a longitudinal direction (), comprising a ferromagnetic material, wherein a transverse cross section () of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (-) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.

Ferromagnetic device providing high domain wall velocities

The invention is directed to a ferromagnetic device (), having an elongated structure extending along a longitudinal direction (), comprising a ferromagnetic material, wherein a transverse cross section () of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (-) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.

A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.

Growing community of inventors

Horgen, Switzerland

Carl Zinoni