Melexis Technologies Nv

Carl Van Buggenhout

Ben Maes

Appolonius Jacobus Van Der Wiel

Karel Vanroye

Jian Chen

Stijn Reekmans

Luc Buydens

Viktor Kassovski

Francois Piette

A method and a circuit for measuring an absolute voltage signal, such that the circuit comprises: an A/D convertor, and a controller adapted for: a) obtaining a first digital reference value for a first reference signal having a positive temperature coefficient; b) obtaining a second digital reference value for a second reference signal having a negative temperature coefficient; c) obtaining a raw digital signal value for the signal to be measured, while applying a same reference voltage for step a) to c); and d) calculating the absolute voltage value in the digital domain using a mathematical function of the first and second digital reference value, and the raw digital signal value.

Device and method for absolute voltage measurement

An infrared sensor assembly for sensing infrared radiation comprises infrared sensing elements and the infrared sensing compensation elements that are different so that, for a same flux on the infrared sensing elements and the infrared sensing compensation elements, the radiation responsive element of the infrared sensing elements absorbs more radiation than the radiation responsive element of the infrared sensing compensation elements, as to receive substantially more radiation than the radiation responsive element of the infrared sensing compensation elements. An output of the sensor array is a subtractive function of a sum of the signals of the plurality of infrared sensing elements and a sum of the signals of the plurality of the infrared sensing compensation elements such that at least linear and/or non-linear parasitic thermal fluxes are at least partly compensated for.

Infrared sensing devices and methods

A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

Low-drift infrared detector

A packaged semiconductor device comprising a stack including a die comprising a functional circuit, and a cap which is wafer bonded to the die for protecting the functional circuit as well as a mold component for packaging the stack. At least the cap and/or the die comprises at least one groove at least partially in contact with the mold component, for increasing adhesion of the mold component to the stack. A corresponding method for manufacturing such a packaged device also is described.

Semiconductor device packaging with reduced size and delamination

Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Semiconductor device having a transparent window for passing radiation

A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second substrate comprising a first cavity and a second cavity both with oblique walls. An internal layer is present on the inside of the second cavity. The second substrate is sealed to the first substrate with the cavities on the inside such that the first cavity is above the first sensor and the second cavity is above the second sensor.

Radiation detector comprising a compensating sensor

An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.

An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (&#x394;T) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

Infrared thermal sensor with beam without thermocouple

An infrared thermal sensor for detecting infrared radiation, comprising a substrate and a cap structure together forming a sealed cavity, the cavity comprising a gas at a predefined pressure; a membrane arranged in said cavity for receiving infrared radiation; a plurality of beams for suspending the membrane; a plurality of thermocouples for measuring a temperature difference between the membrane and the substrate; wherein the ratio of the thermal resistance between the membrane and the substrate through the thermocouples, and the thermal resistance between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. A method of designing such a sensor, and a method of producing such a sensor is also disclosed.

Infrared thermal sensor with good SNR

An infrared thermal sensor for detecting infrared radiation is described. It comprises a substrate and a cap structure together forming a sealed cavity. A membrane is suspended therein by a plurality of beams, each beam comprising at least one thermocouple arranged therein or thereon for measuring a temperature difference between the membrane and the substrate. At least two beams have a different length and each of the thermocouples have a substantially same constant width to length ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The beams may be linear, and be oriented in a non-radial direction.

Infrared thermal sensor with beams having different widths

The invention relates to an infrared thermal sensor comprising a substrate having a cavity, a cavity bottom wall formed by a continuous substrate surface. The sensor comprises a membrane adapted for receiving heat from incident infrared radiation, a beam suspending the membrane, and a thermocouple. This membrane comprises openings extending through the membrane for facilitating the passage of an anisotropic etchant for etching the cavity during manufacture. Each opening has a cross-section with a length to width ratio of at least 4. The width direction of respectively a first and a second set of openings is oriented according to respectively a first crystallographic orientation and a second crystallographic orientation, these orientations corresponding to different directions lying in loosely packed crystal lattice faces of the semiconductor substrate.

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Aalst, Belgium

Carl Van Buggenhout