USA As Represented by Secretary of the Navy

Carl S Hellberg

Berend T Jonker

Connie H Li

Glenn Jernigan

Ramasis Goswami

A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Solid phase epitaxy of 3C-SiC on Si(001)

A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

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Bethesda, MD, United States of America

Carl S Hellberg