Intel Corporation

Carl H Naylor

Christopher J Jezewski

Uygar E Avci

Ashish Verma Penumatcha

Chelsey Dorow

Kirby Maxey

Tanay Gosavi

Urusa Alaan

Sudarat Lee

Abhishek A Sharma

Kevin Lai Lin

Mauro J Kobrinsky

Shriram Shivaraman

Chia-Ching Lin

Kevin P O'brien

Kevin O'Brien

Ashish Agrawal

Matthew V Metz

Ramanan Chebiam

Jeffery D Bielefeld

Noriyuki Sato

Scott Bruce Clendenning

Tristan A Tronic

Elijah V Karpov

Manish Chandhok

Hui Jae Yoo

James M Blackwell

Miriam Ruth Reshotko

Nafees Kabir

Justin R Weber

Michael Christenson

Jiun-Ruey Chen

Ian A Young

Seung Hoon Sung

Dmitri E Nikonov

Kaan Oguz

Sean W King

John J Plombon

Jasmeet S Chawla

Brennen Karl Mueller

Benjamin Buford

Richard F Vreeland

Patrick Theofanis

William Brezinski

Emily Walker

Sunny Chugh

Ashish Agarwal

Kevin Obrien

Thin film transistors having strain-inducing structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two-dimensional (2D) material layer above a substrate. A gate stack is on the 2D material layer, the gate stack having a first side opposite a second side. A first gate spacer is on the 2D material layer and adjacent to the first side of the gate stack. A second gate spacer is on the 2D material layer and adjacent to the second side of the gate stack. The first gate spacer and the second gate spacer induce a strain on the 2D material layer. A first conductive structure is on the 2D material layer and adjacent to the first gate spacer. A second conductive structure is on the 2D material layer and adjacent to the second gate spacer.

Thin film transistors having strain-inducing structures integrated with 2D channel materials

A transistor includes a channel layer including a transition metal dichalcogenide (TMD) material, an encapsulation layer on a first portion of the channel layer, a gate electrode above the encapsulation layer, a gate dielectric layer between the gate electrode and the encapsulation layer. The transistor further includes a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate structure is between drain contact and the source contact.

Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

Integrated circuit interconnect structures with graphene cap

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a first transistor on a first level, and a second transistor on a second level above the first level. In an embodiment, an insulating layer is between the first level and the second level, and a via passes through the insulating layer, and electrically couples the first transistor to the second transistor. In an embodiment, the first transistor and the second transistor comprise a first channel, and a second channel over the first channel. In an embodiment, the first second transistor further comprise a gate structure between the first channel and the second channel, a source contact on a first end of the first channel and the second channel, and a drain contact on a second end of the first channel and the second channel.

Stacked 2D CMOS with inter metal layers

Embodiments of the disclosure are directed to advanced integrated circuit (IC) structure fabrication and, in particular, to IC structures with graphene contacts. Other embodiments may be disclosed or claimed.

Integrated circuit structures with graphene contacts

Techniques are provided herein for forming interconnect structures, such as conductive vias or contacts, that are protected from subsequent processing that includes reactive gas or plasma. A conductive via or contact within an interconnect layer may be formed with a capping layer having a different material to protect the underlying metal material from reacting with certain reactive gas or plasma elements. In some examples, a ruthenium capping layer is formed over a copper via to protect the copper. Other capping layer materials may include tungsten, cobalt, or molybdenum. In some embodiments, the entire conductive via may be formed using one of ruthenium, tungsten, cobalt, or molybdenum, to avoid the use of more reactive metals, such as copper. The capping layer (or less reactive metals) are used to protect the via during a barrier layer doping process that uses a gas or plasma including a chalcogen element (e.g., sulfur and/or selenium).

Interconnect structures with different metal materials

Transistors, devices, systems, and methods are discussed related to transistors including a number of 2D material channel layers and source and drain control electrodes coupled to source and drain control regions of the 2D material channels. The source and drain control electrodes are on opposite sides of a gate electrode, which controls a channel region of the 2D material channels. The source and drain control electrodes provide for reduced contact resistance of the transistor, the ability to create complex logic gates, and other advantages.

Contact gating for 2D field effect transistors

Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.

Transistors including two-dimensional materials

Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.

TMD inverted nanowire integration

Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

Transistors with monocrystalline metal chalcogenide channel materials

A transistor includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source structure coupled to a first end of the first and second channel layers, a drain structure coupled to a second end of the first and second channel layers, a gate structure between the source material and the drain material, and between the first channel layer and the second channel layer. The transistor further includes a spacer laterally between the gate structure and the and the source structure and between the gate structure and the drain structure. A liner is between the spacer and the gate structure. The liner is in contact with the first channel layer and the second channel layer and extends between the gate structure and the respective source structure and the drain structure.

Transition metal dichalcogenide nanosheet transistors and methods of fabrication

An aspect of the disclosure relates to an integrated circuit. The integrated circuit includes a first electrically conductive structure, a thin film crystal layer located on the first electrically conductive structure, and a second electrically conductive structure including metal e.g. copper. The second electrically conductive structure is located on the thin film crystal layer. The first electrically conductive structure is electrically connected to the second electrically conductive structure through the thin film crystal layer. The thin film crystal layer may be provided as a copper diffusion barrier.

Integrated circuits and methods for forming thin film crystal layers

A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source material coupled to a first end of the first and second channel layers, a drain material coupled to a second end of the first and second channel layers, a gate electrode between the source material and the drain material, and between the first channel layer and the second channel layer and a gate dielectric between the gate electrode and each of the first channel layer and the second channel layer.

Transition metal dichalcogenide nanowires and methods of fabrication

Integrated circuit interconnect structures including an interconnect metallization feature with a barrier material comprising a metal and a chalcogen. Introduction of the chalcogen may improve diffusion barrier properties at a given barrier material layer thickness with increasing the barrier layer thickness. A barrier material, such as TaN, may be deposited at minimal thickness, and doped with a chalcogen before or after one or more fill materials are deposited over the barrier material. During thermal processing mobile chalcogen impurities may collect within regions within the barrier material to high enough concentrations for at least a portion of the barrier material to be converted into a metal chalcogenide layer. The metal chalcogenide layer may have greater crystallinity than a remainder of the barrier layer.

Integrated circuit interconnect structures with ultra-thin metal chalcogenide barrier materials

A transistor includes a channel including a first layer including a first monocrystalline transition metal dichalcogenide (TMD) material, where the first layer is stoichiometric and includes a first transition metal. The channel further includes a second layer above the first layer, the second layer including a second monocrystalline TMD material, where the second monocrystalline TMD material includes a second transition metal and oxygen, and where the second layer is sub-stoichiometric. The transistor further includes a gate electrode above a first portion of the channel layer, a gate dielectric layer between the channel layer and the gate electrode, a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate electrode is between drain contact and the source contact.

Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

Growing community of inventors

Portland, OR, United States of America

Carl H Naylor