Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Samsung Lcd Netherlands R&d Center B.v.

Carl Glasse

Bart Gottenbos

Martin John Powell

Steven Charles Deane

John M Shannon

Stanley D Brotherton

David J McCulloch

Anthony Roy Franklin

Peter Douglas Fairly

Maaike Cornelia Johanna Wilhelmina Van Hulten

Barry F Martin

Disclosed is a method, and a system, for accomplishing the in situ formation of a gel in an interdental space. This is useful for the interdental application of one or more dental care agents, such as antimicrobial agents or other anti-plaque agents. The invention makes use of a two component system comprising a gelable liquid and a liquid gelling agent capable of bringing about gelation of the liquid. The system of the invention is arranged such that first the gelable, typically viscous, liquid can be applied, and then the liquid gelling agent is forced, e.g. jetted, into the applied gelable liquid. The system is designed such as to prevent the gelling agent and the gelable liquid to come into contact with each other before both have been applied. The system is configured to allow the gelable liquid to be applied prior to the gelling agent.

Administration of oral care agents

Disclosed is a system and method for the delivery, into interdental spaces, of oral care active agents contained in particles. The particles are made of one or more superabsorbent polymers (SAP), and are of size generally small enough to be easily applied into an interdental space. To this end, the particles typically have a length of below 1.5 mm. By virtue of the SAP's ability of absorbing several times its own weight in water, the particles will swell once in contact with saliva. As a result, the volume of the particles as applied in between teeth increases by at least eight times, thereby effectively making the particles larger than the average interdental gap size. The particles, once swollen, are thus held more firmly between the walls of the interdental space, thus preventing them from being easily washed away.

Oral care particles and system for the administration thereof

An electronic device comprises an array of electro wetting cells, each cell comprising first and second liquids () which are immiscible in each other. An electrode arrangement () is used to control the position of the interface between the first and second liquids, and comprises a first electrode and a second electrode. Each cell comprises a first switching device () for applying a cell drive voltage to the first electrode (), and a second switching device () for simultaneously applying the same cell drive voltage to the second electrode (). The cell circuit can be produced without requiring any additional control lines to those required for a single electrode and associated switching device, but the use of two switching devices enables the ultimate signal applied to each electrode to be different as a result of different capacitive effects. This then enables control over the way the liquid interface moves in response to control voltages.

Electronic device based on electrowetting effect

A method of making a source-gated transistor is described, in which a gate () is provided on substrate () followed by gate insulator () and semiconductor layer (). The layer is patterned to align the source with the gate () using photoresist () and back illumination through the substrate () with the gate () acting as a mask. The distance between source and drain may also be self-aligned using a spacer technique.

Transistor manufacture

A method of producing a top gate thin-film transistor in which an insulated gate structure ( ) is formed over an amorphous silicon layer with upper gate conductor ( ) directly over the gate insulator layers. The gate conductor is patterned to be narrower than a spacing to be provided between source and drain electrode contacts. Laser annealing of areas of the amorphous silicon layer ( ) not shielded by the gate conductor ( ) is carried out to form polysilicon portions. The gate insulator layers are formed as a gate insulator layer ( ) of first refractive index, and an overlying surface insulator layer ( ) of second, lower, refractive index. The overlying surface insulator layer has been found to reduce fluctuations in the reflectance of the structure in dependence upon the specific thicknesses of the gate insulator layers. Therefore, the tolerances for the thicknesses of the gate insulator layers can be reduced whilst maintaining control of the laser annealing process.

Top gate thin-film transistor and method of producing the same

An ion implantation process comprises performing mass separation of ions from an ionised source of phosphorus so as to select the P,ions and reject phosphorus hydride ion species. The P,ions are injected into a semiconductor substrate. The rejection of phosphorus hydride ions species is facilitated because there are no such species adjacent (in terms of effective mass) the P,ion species. The use of the P,ion species also improves the implantation process for shallow implantation depths.

Ion implantation process

An image sensor comprises switching elements 30 on a substrate 1. An insulating separation layer 9 is disposed over the switching elements so that a photodiode arrangement 20a disposed over the insulating separation layer 9, can overlap the switching elements 30 and occupy a maximum area of the image sensor. A barrier layer 10 is interposed between the insulating separation layer 9 and the photodiode arrangement 20a, which prevents degradation of the photodiode characteristics over time.

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Redhill, United Kingdom

Carl Glasse