International Business Machines Corporation

Carl Eric Larson

Gregory Michael Wallraff

Robert David Allen

Phillip Joe Brock

Gregory Breyta

Ratnam Sooriyakumaran

Hoa D Truong

Thomas H Baum

Linda Karin Sundberg

Dirk Pfeiffer

David Robert Medeiros

Richard Anthony DiPietro

Debra Fenzel-Alexander

James L Hedrick

Scott Kevin Reynolds

William Dinan Hinsberg

Daniel Joseph Dawson

Dario Gil

Krishna M Bajjuri

Daniel Sanders

Paul B Comita

Steven Erik Steen

James Economy

Robert L Jackson

Raman Gobichettipalayam Viswanathan

Sharee Jane McNab

George William Tyndall, Iii

Christopher R Moylan

Nigel P Hacker

James R Lyerla, Jr

Robert Allen David

Provided is a method of depolymerizing polyesters from post-consumer products, such as beverage bottles, to produce a high purity reaction product. For the depolymerization reaction, the polyesters are reacted with an alcohol and an amine organocatalyst at a temperature of about 150&#xb0; C. to about 250&#xb0; C. In one application, the use of an organocatalyst with a boiling point significantly lower than the boiling point of the reactant alcohol allows for the ready recycling of the amine organocatalyst. In another application, performing the depolymerization reaction under pressure at a temperature above the boiling point of the alcohol allows for accelerated depolymerization rates and the recovery of the organocatalyst with no further heat input. In a further application, glycolytic depolymerization of poly(ethylene terephthalate) (PET) produces a reaction product of bis(2-hydroxyethyl)terephthalate (BHET), which may in turn be used to produce high purity beverage bottle grade PET, in a closed loop process with minimal waste.

Methods and materials for depolymerizing polyesters

Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

Self-topcoating resist for photolithography

A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

High contact angle topcoat material and use thereof in lithography process

A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 &#x212b;/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Immersion topcoat materials with improved performance

A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Arand Arare independently selected from monocyclic aryl and monocyclic heteroaryl, Rand Rmay be the same or different, and have the structure &#x2014;X&#x2014;Rwhere X is O or S and Ris C-Chydrocarbyl or heteroatom-containing C-Chydrocarbyl, and Rand Rare independently selected from the group consisting of hydrogen and &#x2014;X&#x2014;R, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar, Ar, or Ris O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Photoresists for visible light imaging

A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.

Method for lithography for optimizing process conditions

The present invention provides methods for forming images in positive- or negative-tone chemically amplified photoresists. The methods of the present invention rely on the vertical up-diffusion of photoacid generated by patternwise imaging of an underlayer disposed on a substrate and overcoated with a polymer containing acid labile functionality. In accordance with the present invention, the vertical up-diffusion can be the sole mechanism for imaging formation or the methods of the present invention can be used in conjunction with conventional imaging processes.

Bilayer film including an underlayer having vertical acid transport properties

A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Arand Arare independently selected from monocyclic aryl and monocyclic heteroaryl, Rand Rmay be the same or different, and have the structure &#x2014;X&#x2014;Rwhere X is O or S and Ris C-Chydrocarbyl or heteroatom-containing C-Chydrocarbyl, and Rand Rare independently selected from the group consisting of hydrogen and &#x2014;X&#x2014;R, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar, Ar, or Ris O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

Method for employing vertical acid transport for lithographic imaging applications

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

Photoresist composition

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formulawhere Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl(CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.

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San Jose, CA, United States of America

Carl Eric Larson