Texas Instruments Corporation

Carl David Willis

Manfred Schiekofer

Badih El-Kareh

Philipp Steinmann

Scott G Balster

Thomas Scharnagl

Wolfgang Ploss

Klaus Schimpf

Michael Waitschull

A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector.

Bipolar transistor

In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regionsby epitaxial deposition of crystalline silicon-germanium layers. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layerscan be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers

Method of fabricating complementary bipolar transistors with SiGe base regions

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Neusaess, Germany

Carl David Willis