Applied Materials, Inc.

Carl Almgren

Robert P Chebi

Yuri Trachuk

A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a 'short' at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

Growing community of inventors

Fort Collins, CA, United States of America

Carl Almgren