Applied Materials, Inc.

Applied Komatsu Technology, Inc.

Applied Material, Inc.

Carl A Sorensen

John M White

Jozef Kudela

Suhail Anwar

Soo Young Choi

Wendell T Blonigan

Robin L Tiner

Shinichi Kurita

Tsutomu Tanaka

Tae Kyung Won

Chien-Teh Kao

Sanjay D Yadav

Young Dong Lee

Kam S Law

Beom Soo Park

Seon-Mee Cho

Ernst Keller

Ranjit Indrajit Shinde

Douglas D Truong

Yui Lun Wu

Daniel Winkler

Quanyuan Shang

Makoto Inagawa

Gaku Furuta

William Reid Harshbarger

Robert M Robertson

Takako Takehara

Haruhiro Harry Goto

Sam Hyungsam Kim

Young Eun Lee

Jeffrey A Kho

Jeff C Olsen

Jeevan Prakash Sequeira

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Film stress control for plasma enhanced chemical vapor deposition

Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.

Large-area high-density plasma processing chamber for flat panel displays

In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus

A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.

Substrate processing method and apparatus for controlling phase angles of harmonic signals

Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

CVD thin film stress control method for display application

A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Transmission line RF applicator for plasma chamber

Systems and methods are provided for matching the impedance of a load to an impedance of a power generator. Embodiments include a matching network with a dynamically configurable component assembly array couplable to the variable impedance load and the RF power generator, wherein the component assembly array includes one or more tune and load electrical components. The component assembly array is adapted to be configured for each recipe step, and at least one of the electrical components is a variable impedance component adjustable to reduce RF energy reflected from the variable impedance load for each recipe step. Numerous other aspects are provided.

Systems and methods for improved radio frequency matching networks

A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

Guided wave applicator with non-gaseous dielectric for plasma chamber

A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Ground return for plasma processes

A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

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Morgan Hill, CA, United States of America

Carl A Sorensen