General Electric Company

Carl A Erikson

Harvey E Cline

Thomas R Anthony

John O Fielding

Siegwalt Ludke

An apparatus for practicing temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Apparatus for practicing temperature gradient zone melting

An apparatus for practising temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Apparatus for practising temperature gradient zone melting

A semiconductor body heater is provided with a planar array of radiant heating elements spaced from a reflector. In the preferred embodiment, each radiant heating element comprises a tungsten filament quartz lamp. Each lamp is removable and replaceable without disengaging any other lamp. The reflector is cooled by flows of gas and liquid coolant therethrough. Flows of gas between the planar array of lamps and the reflector and between the reflector and a cover member also cool the apparatus. Various diffusers for substantially eliminating temperature nonuniformities over an area illumined by the planar array of lamps are also disclosed. The semiconductor body heater of the present invention is particularly well suited for use in a temperature gradient zone melting process.

Semiconductor body heater

A furnace for practising temperature gradient zone melting on one or more semiconductor bodies comprises a closable work chamber for receiving semiconductor bodies for processing, a radiant heat source which forms a first closure member and a heat sink which forms a second closure member, the closure members defining the work chamber and being mutually separable by, for example, a hydraulic actuator to allow access to the interior of the work chamber. A reflector is disposed between the heat source and heat sink in surrounding relationship to the semiconductor bodies being processed to ensure the maintenance of a uniform temperature gradient within the work chamber. The reflector and the heat sink are liquid cooled for the effective removal of heat therefrom. The heat sink is further provided with a plurality of radiation attenuating cavities to enhance the performance of the heat sink.

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Schenectady, NY, United States of America

Carl A Erikson