Applied Materials, Inc.

Lam Research Corporation

Canfeng Lai

Michael Santiago Cox

Shamouil Shamouilian

Tsutomu Tanaka

Peter I Porshnev

Jeffrey A Tobin

Qiwei Liang

Peter K Loewenhardt

Adam J Fischbach

Ellie Y Yieh

Kallol Bera

Majeed Foad

Lara Hawrylchak

John P Parks

Padmanabhan Krishnaraj

Siqing Lu

Lily L Pang

Bernard Lloyd Hwang

Khokan Chandra Paul

Carlaton Wong

Sathya Swaroop Ganta

Robert Chen

Dmitry Lubomirsky

Andrew Nguyen

Michael S Barnes

Christopher F Lane

Matthew S Rogers

Christopher Sean Olsen

Muhammad M Rasheed

Jay D Pinson, Ii

Xinglong Chen

Timothy Joseph Franklin

Martin A Hilkene

Zhong Qiang Hua

Malcolm J Bevan

Matthew D Scotney-Castle

Manoj Vellaikal

Sudhir R Gondhalekar

Kaushik Comandoor Alayavalli

Jose Antonio Marin

Pavel Ionov

Ravikumar Patil

Kartik Santhanam

Roger Curtis

Akshay Dhanakshirur

Robert B Majewski

David P Wanamaker

Yen B Ta

Weiyi Luo

Vijet Patil

Jennifer Y Sun

Juan Carlos Rocha-Alvarez

Wei Liu

Tetsuya Ishikawa

Ganesh Balasubramanian

Thomas E Nowak

Tom K Cho

Young Seen Lee

Zhenjiang Cui

Ren-Guan Duan

Siamak Salimian

Johanes F Swenberg

Bhaskar Kumar

Laxman Murugesh

Kien Nai Chuc

Zhengquan Tan

Rongping Wang

DongQing Li

Sebastien Raoux

Ivelin A Angelov

Badri N Ramamurthi

Vinayak Vishwanath Hassan

Joon Hong Park

Anup Kumar Singh

Jason T Bloking

Robert Duncan

James Eugene Caron

Steven H Kim

Kaveh F Niazi

Rick Kustra

Jason Lee Treadwell

Yuri Trachuk

Job George Konnoth Joseph

Padmanaban Krishnaraj

Charles P Ross

Anil Kumar Kalal

Alexander Veyster

Irene Chou

Steve H Kim

Narendra Dubey

Abhishek Pandey

Paddy Krishnaraj

A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Showerhead design to control stray deposition

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.

Semiconductor processing chambers and methods for deposition and etch

Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include forming a treatment plasma within the processing region of the semiconductor processing chamber. The treatment plasma may be formed at a first power level from a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The methods may include densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma.

Single chamber flowable film formation and treatments

Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

Magnetic holding structures for plasma processing applications

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

Semiconductor processing chambers for deposition and etch

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Method and apparatus for selective nitridation process

A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Inductive plasma source with metallic shower head using b-field concentrator

Radio frequency conduit

A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring

Inductive plasma source with metallic shower head using B-field concentrator

Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Methods and apparatus for processing substrates using an ion shield

A gas distribution plate is formed of a metallic body having a bottom surface with plural gas disperser orifices and an internal gas manifold feeding the orifices. Each one of an array of discrete RF power applicators held in the plate includes (a) an insulating cylindrical housing extending through the plate, a portion of the housing extending outside of the plate through the bottom surface, and (b) a conductive solenoidal coil contained within the housing, a portion of the coil lying within the portion of the housing that extends outside of the plate through the bottom surface.

Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma

In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking

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Fremont, CA, United States of America

Canfeng Lai