Georgia Tech Research Corporation

Purdue Research Foundation

United States of America, As Represented by the Secretary of Agriculture

Princeton University

Canek Fuentes-Hernandez

Bernard Kippelen

Seth R Marder

Wen-Fang Chou

Yinhua Zhou

Jeffrey Paul Youngblood

Robert J Moon

Antoine Kahn

Do Kyung Hwang

Xiaojia Jia

Jae Won Shim

Jens Meyer

Jungbae Kim

James June Fan Hsu

Vladimir Kolesov

Felipe A Larrain

Junji Kido

Naoya Aizawa

Provided is a semiconductor device having a dual gate field-effect transistor and a sensor in electrical communication with the transistor. The field-effect transistor can have a first gate electrode, a second gate electrode, a source electrode, a drain electrode, a semiconductor layer with parts in contact with the source and drain electrodes, a bi-layer gate insulator, and a second gate insulator. The bi-layer gate insulator can include a first layer and a second layer, the first layer located between the second layer and a first side of the semiconductor layer, the second layer located between the first layer and the first gate electrode. The second gate insulator can be located between the second gate electrode and a second side of the semiconductor layer, and the sensor can be in electrical communication with the second gate electrode.

High sensitivity stable sensors and methods for manufacturing same

The disclosed technology includes systems, devices, and methods associate with producing an organic semiconductor film having electrical dopant molecules distributed to a controlled depth. In an example implementation, a semiconductor device is provided. The semiconductor device can include a first substrate and an organic semiconductor film disposed on the first substrate. The organic semiconductor film includes a first region characterized by electrical dopant molecules distributed to a controlled depth with respect to a first surface of the organic semiconductor film. The semiconductor device further can include an electrode in contact with at least a portion of the first region of the organic semiconductor film.

Devices with organic semiconductor layers electrically-doped over a controlled depth

An optical device capable of an ultrafast and large change of its reflection or absorption coefficient upon being excited by an ultrafast optical pulse with wavelength in the visible, near-infrared, or infrared spectral regions. The optical device includes, in sequential order, a first thick metallic layer, a first dielectric layer, a second thin metallic layer, and a second dielectric layer. The optical device acts as a nonlinear mirror that presents a large reflectance at low irradiance and a low reflectance at large irradiance. The optical device can further act as a nonlinear mirror that presents a linear and nonlinear reflectance with a large angular bandwidth.

Devices, systems and methods for ultrafast optical applications

A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

Multi-layer gate dielectric field-effect transistor and manufacturing process thereof

Recyclable organic solar cells are disclosed herein. Systems and methods are further disclosed for producing, improving performance, and for recycling the solar cells. In certain example embodiments, the recyclable organic solar cells disclosed herein include: a first electrode; a second electrode; a photoactive layer disposed between the first electrode and the second electrode; an interlayer comprising a Lewis basic oligomer or polymer disposed between the photoactive layer and at least a portion of the first electrode or the second electrode; and a substrate disposed adjacent to the first electrode or the second electrode. The interlayer reduces the work function associated with the first or second electrode. In certain example embodiments, the substrate comprises cellulose nanocrystals that can be recycled. In certain example embodiments, one or more of the first electrode, the photoactive layer, and the second electrode may be applied by a film transfer lamination method.

Recyclable organic solar cells on substrates comprising cellulose nanocrystals (CNC)

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.

Systems and methods for producing low work function electrodes

Growing community of inventors

Atlanta, GA, United States of America

Canek Fuentes-Hernandez