Applied Materials, Inc.

Calvin R Augason

Joseph Yudovsky

Arnold Kholodenko

Chien-Teh Kao

Semyon Sherstinsky

Kenneth Tsai

Ronald Lloyd Rose

Quyen Pham

Leonel Arturo Zuniga

Christopher F Lane

Jun Zhao

Maitreyee Mahajani

Steve G Ghanayem

Talex Sajoto

Alexander S Polyak

Leonid Selyutin

Robert Hirahara

Josef Thomas Hoog

Tai T Ngo

James Omer L'Heureux

Samuel C Wilson

Juergen Henrich

Susanne Schlaefer

Abhi Desai

Michael Phillips

An aluminum heated substrate support suitable for use in high temperature substrate processing systems and method for fabricating the same are provided. In one embodiment, an aluminum heated substrate support can include an aluminum body, a stem coupled to the body and a heating element disposed in the body. The body has an average grain size less than about 250 &#x3bc;m. In some embodiments, the stem to body joint is a fully penetrated lap weld that promotes service life of the substrate support.

High temperature fine grain aluminum heater

Methods and apparatus for transferring one or more substrates from a first pressure environment to a second pressure environment is provided. In one embodiment, a load lock chamber is provided. The load lock chamber comprises a first circular housing, and a second circular housing disposed within and movable relative to the first circular housing, one of the first circular housing or the second circular housing comprising a plurality of discrete regions, wherein at least a portion of the plurality of discrete regions are in selective fluid communication with one of at least two vacuum pumps based on the angular position of the second circular housing relative to the first circular housing.

Load lock chamber designs for high-throughput processing system

The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.

Substrate support member

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Substrate support member for a processing chamber

An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.

Method for improved remote microwave plasma source for use with substrate processing system

Apparatus for improved remote microwave plasma source for use with

Growing community of inventors

Los Altos, CA, United States of America

Calvin R Augason