Alliance for Sustainable Energy, LLC

Midwest Research Institute

Rohm & Haas Electronic Materials LLC

Heliovolt Corporation

Global Water Group, Incorporated

Calvin J Curtis

David Samuel Ginley

Alexander Miedaner

Marinus Franciscus Antonius Maria Van Hest

Douglas L Schulz

Billy J Stanbery

Peter A Hersh

Maikel Van Hest

Louay Eldada

Susan Ellen Habas

Dana C Olson

Tatiana Kaydanova

Benjamin Rupert

Joseph Jonathan Berry

Erik Reddington

Scott Ryan Hammond

Lujia Bu

Matthew O Reese

David S Ginley

Thomas Charles Sutter

Matthew Taylor

Alan M Weiss

Arnold Paddock

Alex Miedaner

Alexandra Cannon

Jennifer A Nekuda

Jennifer Leisch

Nicodemus Edwin Widjonarko

Matthew T Lloyd

Jordan P Chesin

Alan J Weiss

K Xerxes Steirer

Martin Pehnt

Alexandra Perras

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Porous block nano-fiber composite (), a filtration system () and methods of using the same are disclosed. An exemplary porous block nano-fiber composite () includes a porous block () having one or more pores (). The porous block nano-fiber composite () also includes a plurality of inorganic nano-fibers () formed within at least one of the pores ().

Porous block nanofiber composite filters

A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225&#xb0; C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlOlayer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150&#xb0; C. The resulting AlOlayer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150&#xb0; C.

Multilayer heterostructures and their manufacture

Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

Liquid precursor for deposition of indium selenide and method of preparing the same

Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

Liquid precursor for deposition of copper selenide and method of preparing the same

An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.

Liquid precursor inks for deposition of In&#x2014;Se, Ga&#x2014;Se and In&#x2014;Ga&#x2014;Se

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

A method for fabricating a contact () for a solar cell (). The method includes providing a solar cell substrate () with a surface that is covered or includes an antireflective coating (). For example, the substrate () may be positioned adjacent or proximate to an outlet of an inkjet printer () or other deposition device. The method continues with forming a burn through layer () on the coating () by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer () comprising silver over or on the burn through layer (), and then annealing is performed to electrically connect the contact layer () to the surface of the solar cell substrate () through a portion of the burn through layer () and the coating ().

Fabrication of contacts for silicon solar cells including printing burn through layers

Self-reducing metal inks and systems and methods for producing and using the same are disclosed. In an exemplary embodiment, a method may comprise selecting a metal-organic (MO) precursor, selecting a reducing agent, and dissolving the MO precursor and the reducing agent in an organic solvent to produce a metal ink that remains in a liquid phase at room temperature. Metal inks, including self-reducing and fire-through metal inks, are also disclosed, as are various applications of the metal inks.

Metal inks

Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

Method for forming metal contacts

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films () on substrates ().

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

A process for forming an electrical conductor on a substrate is provided, consisting essentially of providing an ink comprised of a metallic chelate, printing directly thereon the ink, and decomposing the ink wherein the metal-chelate is converted to a solid metal conductor on the substrate.

Direct printing of thin-film conductors using metal-chelate inks

The present invention provides a process for etching a corrosion layer, such as oxide or hydroxide, from and concomitantly forming a passivating layer on the surface of metallic nanoparticles. A reaction mixture is prepared by dispersing sodium hexafluoroacetylacetonate (Na(hfa)) and a metallic particle powder having oxide or hydroxide corrosion layers in hexane solvent. The mixture is allowed to react for a time sufficient to etch the oxide or hydroxide groups from the particulate surface and passivate the surfaces with (hfa). Hexane may be evaporated from the mixture and any excess Na(hfa) separated from the reaction mixture by sublimation or rinsing with a polar aprotic solvent. In an embodiment of the present invention, aluminum particles are first etched and passivated and then used to form ohmic contacts with p-type silicon. This etching/passivation improves the electrical properties of the contact.

Passivating etchants for metallic particles

A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

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Lakewood, CO, United States of America

Calvin J Curtis