Tokyo Electron Limited

Caizhong Tian

Toshihisa Nozawa

Kiyotaka Ishibashi

Tetsuya Nishizuka

Naoki Matsumoto

Jun Yoshikawa

Kazuki Moyama

Naoki Mihara

Lee Chen

Junichi Kitagawa

Masaru Sasaki

Takehiro Tanikawa

Koji Koyama

Kazuki Takahashi

Hiromitsu Kambara

An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Apparatus for plasma treatment and method for plasma treatment

A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Dielectric window for plasma treatment device, and plasma treatment device

A plasma generation chamber of a plasma processing apparatus is closed by a top plate. The top platehas recessesA on its surface facing the plasma generation chamber and a central recessB on an opposite surface. The top plateis coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top platesuch that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recessesA and the microwave is propagated within the recessesA in a single mode. Strong plasma can be generated within each of the recessesA, so that a stable plasma mode can be generated in the top plate

Top plate of microwave plasma processing apparatus, plasma processing apparatus and plasma processing method

A manufacturing method of a top plate hermetically attached to an upper opening of a tubular shaped container body for forming a processing container of a plasma processing apparatus is provided. The manufacturing method includes the steps of; preparing a top plate body comprised of a dielectric body for transmitting an electromagnetic wave, and having a gas ejection hole for ejecting a gas into the processing container; forming a discharge prevention member having a discharge prevention member body comprised of a dielectric body having a permeability, and a dense member comprised of a dielectric body without a permeability covering at least a side face of the discharge prevention member body; and attaching the discharge prevention member in the gas ejection hole of the top plate body.

Manufacturing method of top plate of plasma processing apparatus

The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.

Plasma processing apparatus

The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

Plasma processing unit

A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

Ceiling plate and plasma process apparatus

In the plasma processing apparatus, microwaves supplied from a coaxial waveguideare introduced into a processing containervia a wavelength-shortening plate, a process gas is plasmatized in the processing container, and a substrate W is processed using the plasma. In the plasma processing apparatus, a dielectric memberis disposed at a connecting area between the coaxial waveguideand the wavelength-shortening plate. Inside an outer conductorof the coaxial waveguide, the dielectric memberis disposed to surround a part of a circumference of an inner conductorof the coaxial waveguide, and is disposed at any position around the circumference of the inner conductor

Plasma processing apparatus and method for adjusting plasma density distribution

A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate composed of a conductor covering the outer circumference of a microwave transmitting board, two or more holes for propagating microwave from an edge part of the microwave transmitting board to an inner part of the plate are formed. Volume adjusting mechanisms and adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board is divided into individual units to which each of the holes belongs, and electric field distribution of the microwave transmitting board is controlled.

Microwave plasma processing apparatus

A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

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Amagasaki, Japan

Caizhong Tian