Intel Corporation

C Scott Huddleston

Rajat Agarwal

Debaleena Das

Meenakshisundaram Chinthamani

Darrell S McGinnis

A novel ECC scheme is disclosed that offers an error protection level that is at least the same as (if not better than) that of the conventional ECC scheme without negatively impacting latency and design complexity. Embodiments of the present disclosure utilize an ECC scheme which leaves up to extra 2B for metadata storage by changing the error detection and correction process flow. The scheme adopts an early error detection mechanism, and tailors the need for subsequent error correction based on the results of the early detection.

Enhanced storage of metadata utilizing improved error detection and correction in computer memory

A dynamic random access memory (DRAM) is operated as a cache memory coupled with a processor core. A block of data is transmitted to the DRAM as even and odd pairs of bits from the processor core. The block of data includes N error correcting code (ECC) bits and 11*N data bits. Two or more cache lines are to be stored in a memory page with tag bits aggregated together within the page.

Mechanisms and techniques for providing cache tags in dynamic random access memory

Methods and apparatuses for including synchronization data to be used for parallel processing in a block of data having error correcting code symbols. The block of data is encoded using an error correcting code. The resulting encoding includes three check symbols per 32 data symbols. At least one synchronization symbol corresponding to the data symbols is generated. The data symbols, the check symbols and the at least one synchronization symbol are combined. The combined data symbols, the check symbols and the at least one synchronization symbol are transmitted.

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Beaverton, OR, United States of America

C Scott Huddleston