Texas Instruments Corporation

C Mutukrishnan

Shivaling S Mahant-Shetti

Robert J Landers

R Krishman

A base cell for a CMOS gate array is provided with a plurality of N-channel transistors 10, 12, 14 with all such N-channel transistors coupled in series. A plurality of P-channel transistors 16, 18 coupled in series. These transistors are interconnected at the transistor level to form a partially prewired circuit. Specifically, the gates of two of the N-channel transistors 12, 14 are connected by polysilicon lead 28 to the gate of transistor 16. This configuration forms a circuit primitive which is well adapted for use as a base cell in a programmable array device.

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Ganganagar, India

C Mutukrishnan