Samsung Electronics Co., Ltd.

Byungyong Choi

Sung-Min Hwang

Changkyu Seol

Doohyun Kim

Dong-Sik Lee

Ilhan Park

Jongwon Kim

Eunsuk Cho

Joyoung Park

Jisang Lee

Gilsung Lee

Kangyoon Choi

Hyukje Kwon

Chunghwan Yang

Taeyun Bae

A method of operating a memory controller, the method including performing a state shaping operation on received data based on state shaping information in response to a write request, the received data and the write request being received from a host, the state shaping information representing a memory cell characteristic corresponding to a memory cell group on which the received data is to be programmed, and the state shaping information being received from a memory device, and transmitting transformation data to the memory device, the transformation data being generated through the state shaping operation.

Memory controllers for performing state shaping operation, memory systems including the memory controllers, and methods of operating the same

A three-dimensional flash memory device is described that may include a substrate, a plurality of cell gate patterns and a plurality of mold insulating layers alternately stacked on the substrate, and a vertical channel structure in contact with side surfaces of the plurality of cell gate patterns and side surfaces of the plurality of mold insulating layers. Each of the plurality of cell gate patterns may include a cell gate electrode and a blocking barrier pattern adjacently disposed on one side surface of the cell gate electrode. An inner side surface of the blocking barrier pattern may include an upper inner side surface, a middle inner side surface, and a lower inner side surface. The middle inner side surface of the blocking barrier pattern may face the one side surface of the cell gate electrode. The blocking barrier pattern may have a portion protruding toward the cell gate electrode at a connection point between the upper inner side surface of the blocking barrier pattern and the middle inner side surface of the blocking barrier pattern.

Three-dimensional flash memory device including cell gate patterns having blocking barrier patterns and a method for manufacturing the same

A three-dimensional (3D) semiconductor memory device includes a substrate that includes a cell array region and a connection region, a dummy trench formed on the connection region, an electrode structure on the substrate and that includes vertically stacked electrodes that have a staircase structure on the connection region, a dummy insulating structure disposed in the dummy trench, the dummy insulating structure including an etch stop pattern spaced apart from the substrate and the electrode structure, a cell channel structure disposed on the cell array region and that penetrates the electrode structure and makes contact with the substrate, and a dummy channel structure disposed on the connection region and that penetrates the electrode structure and a portion of the dummy insulating structure and that makes contact with the etch stop pattern.

Three-dimensional semiconductor memory device

Growing community of inventors

Seongnam-si, South Korea

Byungyong Choi