Samsung Electronics Co., Ltd.

Byungsuk Woo

Changkyu Seol

Sucheol Lee

Yongho Cho

Younguk Chang

Chanik Park

Cheolmin Park

A receiver that receives a multi-level signal includes a compensation circuit, a sampling circuit, an output circuit and a mode selector. The compensation circuit generates a plurality of data signals and a plurality of reference voltages by compensating intersymbol interference on an input data signal. The sampling circuit generates a plurality of sample signals based on the plurality of data signals and the plurality of reference voltages. The output circuit generates output data based on the plurality of sample signals, and selects a current value of the output data based on a previous value of the output data. The mode selector generates a mode selection signal used to select one of first and second operation modes based on an operating environment. The compensation circuit and the sampling circuit are entirely enabled in the first operation mode, and the compensation circuit and the sampling circuit are partially enabled in the second operation mode.

Receiver receiving multi-level signal, memory device including the same and method of receiving data using the same

In a method of generating a signal for test in a memory device configured to output a multi-level signal, an operation mode is set to a first test mode. During the first test mode, first data bits included in a plurality of test data are arranged based on a first scheme. Each of the plurality of test data includes two or more data bits. During the first test mode, a first test result signal having two voltage levels is generated based on the first data bits according to the first scheme. The operation mode is set to a second test mode during which second data bits included in the plurality of test data are arranged based on a second scheme. During the second test mode, a second test result signal having the two voltage levels is generated based on the second data bits according to the second scheme.

Method of generating signal for test in memory device using multi-level signaling and memory device performing the same

A high bandwidth memory system includes a motherboard; and a semiconductor package coupled to the motherboard. The semiconductor package includes a package substrate mounted on the motherboard and including signal lines providing a plurality of channels; a first semiconductor device mounted on the package substrate and including a first physical layer (PHY) circuit; and a second semiconductor device mounted on the package substrate and including a second PHY circuit. The first semiconductor device and the second semiconductor device exchange a data signal with each other through the plurality of channels, the data signal is a multilevel signal having M levels, where M is a natural number greater than 2, and the first PHY circuit compensates for distortion of the channels and performs digital signal processing to compensate for a mismatch between the channels.

High bandwidth memory system using multilevel signaling

A receiver included in a memory device includes a flag generator circuit, an equalizer circuit and an equalization controller circuit. The flag generator circuit is configured to, during a normal operation mode, generates a flag signal without an external command. The equalizer circuit is configured to, during the normal operation mode, receive an input data signal through a channel, generate an equalized signal by equalizing the input data signal based on an equalization coefficient, and generate a data sample signal including a plurality of data bits based on the equalized signal. The equalization controller circuit is configured to, during the normal operation mode, determine an amount of change in the equalization coefficient based on the flag signal, the equalized signal and the data sample signal, and perform a training operation in which the equalization coefficient is updated in real time based on the amount of change in the equalization coefficient.

Receiver performing background training, memory device including the same and method of receiving data using the same

A multi-level signal generator includes a receiving circuit, a setting circuit, a data bit generating circuit and a digital-to-analog converter. The receiving circuit generates a first data bit based on an input data signal having two voltage levels that are different from each other. The setting circuit generates a flag signal based on a command signal. The flag signal is changed depending on an operation mode. The data bit generating circuit generates a plurality of internal bits based on the first data bit, selects at least one of the plurality of internal bits based on the flag signal, and outputs the selected internal bit as at least one additional data bit. The digital-to-analog converter generates an output data signal that is a multi-level signal having three or more voltage levels different from each other based on the first data bit and the at least one additional data bit.

Multi-level signal generator and memory device including the same

A receiver including: a data processing circuit, in a training mode, to compare a multi-level signal with first and second voltage signals, and to generate data density signals; a counter circuit to count the data density signals to generate counting values; a control circuit to store, in a register set, a voltage range, counting values corresponding to the voltage range and a control code associated with a first level of the first voltage signal and a second level of the second voltage signal, the voltage range being based on the first and second voltage signals; and a voltage generation circuit, in the training mode, to apply the first and second voltage signals to the data processing circuit and to increase the first level and the second level by a difference between the first and second control signals in response to the control code from the control circuit.

Receivers for performing reference voltage training and memory systems including the same

Receiver receiving multi-level signal, memory device including the same and method of receiving data using ihe same

A memory device includes: a memory cell array; a data selector configured to receive data from the memory cell array, and to output the received data as first sub-data and second sub-data; a cyclic redundancy check (CRC) generator configured to generate first CRC values corresponding to the first sub-data, and to generate second CRC values corresponding to the second sub-data; a CRC selector configured to determine an order of the first CRC values and the second CRC values, and to output one of the first CRC values and one of the second CRC values according to the determined order; and a transmitter configured to receive the first CRC values and the second CRC values according to the determined order, and to transmit CRC values of the data by a multilevel signaling method.

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Hwaseong-si, South Korea

Byungsuk Woo