Samsung Display Co., Ltd.

Byungsoo So

Jaewoo Jeong

Jongoh Seo

Jongjun Baek

Dongmin Lee

Dongsung Lee

Taewook Kang

Hiroshi Okumura

Cheolho Park

Jihwan Kim

Jihyun Kim

Hyuneok Shin

Gyungmin Baek

Jonghoon Choi

Wooseok Jeon

Janghyun Kim

Yeonhee Jeon

Minkyung Kang

Byungkyu Son

Seunghyun Jang

A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.

Display apparatus and method of manufacturing the same

A display device including a display area and a non-display area further includes a base layer including a first surface and a second surface opposite to the first surface, the base layer having, in the non-display area, an opening portion penetrating the first surface and the second surface; a pad unit including a terminal on the first surface, the pad unit extending from the first surface to the opening portion; a connection line connected to the terminal on the first surface, the connection line extending from the non-display area to the display area; an insulating layer covering the terminal and the connection line; a thin-film transistor including a semiconductor layer on the insulating layer, the thin-film transistor being connected to the connection line; and a display element connected to the thin-film transistor, the display element being in the display area.

Display device and method of manufacturing the display device

A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

Display device and method of manufacturing the same

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.

Display apparatus with doped barrier and conductive layers and method of manufacturing the same

A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.

Method for manufacturing display panel by providing laser light to doped preliminary active layer to form active layer

A manufacturing method of a display apparatus including preparing a substrate, forming an amorphous silicon layer on the substrate, cleaning the amorphous silicon layer with hydrofluoric acid, crystallizing the amorphous silicon layer into a polycrystalline silicon layer, and forming a metal layer directly on the polycrystalline silicon layer.

Method for manufacturing display apparatus

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same

Display panel having active layer with a surface layer in which F concentration is greater than a core layer

A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

Thin film transistor, display apparatus including the same, and manufacturing methods thereof

A display apparatus includes a substrate including a polymer resin. A portion of the substrate including an upper surface of the substrate is doped with 1&#xd7;10to 1&#xd7;10dopants per 1 cm. A barrier layer is positioned above the upper surface of the substrate. A buffer layer is positioned above the barrier layer. A thin film transistor is positioned above the buffer layer. A display device is electrically connected to the thin film transistor.

Growing community of inventors

Yongin-si, South Korea

Byungsoo So