Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Shinhancard Co., Ltd.

Hyundai Card Co., Ltd.

Kb Kookmincard Co., Ltd.

Samsung Card Co., Ltd.

Lotte Card Co., Ltd.

Nonghyup Bank

Byungsoo Kim

Seongahn Jeon

Hana Kim

Dana Jung

Yihyun Moon

Sangho Lee

Hyuntae Ahn

Sanggi Kim

Donghyun Kim

Jaeyong Jeong

Hyunggon Kim

Wandong Kim

Jeongjin Lee

EunJung Park

Hae Chul Park

Taeho Kim

Yooseok Kim

Jongho Kim

Jeongrok Lee

Hyunbyung Cha

Youngjin Park

Bongsoon Lim

Sangwan Nam

Suyoung Lee

Deung Hwangbo

Hwayun Choi

Kyoungju Ryu

Injoong Kim

Joseph Lee

Junyong Park

Sungmin Joe

Minjae Seo

Hanbyeol Seok

Joungwook Park

Changwoo Song

Dongup Seo

Duil Kim

Kyungmin Park

Jinwoo Lee

Dohan Kim

Jiyoung Lee

Seonkeun Yoo

Sangwon Park

Yongsung Cho

Seunghee Yoon

Hyoseok Kim

Juho Son

Joonho Kim

YongMin Ha

Jungkeun Kim

Kyungsoo Park

Eunji Choi

Sunghoon Joo

Kyoman Kang

Jeonga Shin

Hanjun Lee

Kyungui Park

ChanWoo Park

Sangbum Yun

Myunghwan Lee

Kyuyoun Hwang

Sangdae Kim

Christopher Hansung Ko

Sejin Baek

Wonkee Ahn

Hogon Kim

Jiyeon Seo

Siva Krishna Vunnam

Seungyeon Eom

Dooman Lee

Jaeho Seo

Bumsu Shin

Sungyoung Jeong

Yimkyong Yoon

Chetan Chindupuragi Sadashivan

Vijay Rachabattuni

Eunjung Park

Kyull Han

A memory device includes a first cell array region and a second cell array region separated by a separation region, each including at least one memory block having a plurality of gate electrode layers stacked in a first direction. The gate electrode layers include an upper select electrode layer including a plurality of string select lines, and a first electrode layer including a plurality of first word lines arranged below the string select lines. The first word lines include a first connection line to connect first end portions of the first word lines positioned on the opposite side of the separation region to each other and a plurality of second connection lines to connect some of second end portions of the plurality of first word lines adjacent to the separation region to each other, wherein each of the second connection lines is shorter than the first connection line.

Memory devices

Provided is a memory device with a vertical channel structure. The memory device includes a memory cell array including a plurality of memory cells and a plurality of string selection lines, a negative charge pump configured to generate a bias voltage of a negative level, to be applied to at least one of the plurality of string selection lines, and a control logic circuit configured to apply, for a first period, a prepulse voltage to at least one unselected string selection line among the plurality of string selection lines excluding a selected string selection line to which a memory cell selected from among the plurality of memory cells is connected and thereafter apply the bias voltage to the at least one unselected string selection line so as to perform a read operation on the selected memory cell.

Memory device including vertical channel structure

A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.

Non-volatile memory device and method for programming a non-volatile memory device

An organic light emitting device having a structure that a plurality of light emitting units are deposited, is disclosed, of which white color shift caused by variation of a viewing angle is reduced through a combination between dopant materials of the respective light emitting units. The organic light emitting device includes dopant materials emitting light of different wavelengths from the plurality of light emitting units. Therefore, in the organic light emitting device, variation of color and luminance, which is perceived by a user as a viewing angle is varied, may be reduced.

Organic light emitting device

A program method includes applying a first voltage to a plurality of bit lines, applying a second voltage to a common source line (CSL), and performing a program loop by applying a program voltage and a verify voltage to each of a plurality of ground selection lines (GSLs) positioned between one bit line among the plurality of bit lines and the CSL. The program loop is performed on both a program completed cell in which a program is completed by applying the program voltage and a program target cell.

Memory device and program method of ground select transistors

A non-volatile memory device includes a plurality of word lines stacked above a substrate in a vertical direction; erase control lines that are spaced apart from each other in a first direction and extend in a second direction; a pass transistor circuit including a first pass transistor connected to a first group of erase control lines and a second pass transistor connected to a second group of erase control lines; and a memory cell array including a plurality of blocks. The first group of erase control lines are relatively close to a word line cut region and the second group of erase control lines are relatively far from the word line cut region. Each of the plurality of blocks includes a plurality of channel structures connected to the word lines and the erase control lines and each channel structure extends in the vertical direction.

Non-volatile memory device

A non-volatile memory device including a memory cell array including a plurality of cell strings, wherein each cell string of the plurality of cell stings includes a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series between a bit line and a common source line; and a control circuit configured to perform a program operation on a selected memory cell from among the plurality of memory cells and pre-charge a selected cell string including the selected memory cell in a pre-charge section included in a verification section, wherein the selected cell string is pre-charged as a first pre-charge voltage is applied to a selected bit line connected to the selected memory cell.

Non-volatile memory device for performing precharge to cell string and program method thereof

Non-volatile memory device and method for programming the same using multiple program operations under different conditions

A non-volatile memory device includes a memory cell array including memory cells respectively connected to bit lines; and a control logic unit configured to control a program operation with respect to the memory cells. The control logic unit is configured to perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and, based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition.

Non-volatile memory device and programming method thereof

An electronic device is provided. The electronic device includes an operation of determining at least one control level by executing at least one scheduling process, an operation of selecting one control level from among the at least one control level, and an operation of transmitting a power control signal corresponding to the selected control level to one or more control target devices. The operation of determining the control level may include an operation of performing a first scheduling process of receiving first power usage data from an external power amount data providing device and determining a first control level based on the first power usage data. In addition to this, various embodiments identified through the specification are possible.

Method for controlling energy saving, and apparatus therefor

Cool-hot storage device

An electronic device and a computer program product are provided herein. The electronic device includes: an audio module, a communication module, a microphone, a memory storing programming instructions, and a processor, which executes the program product, causing the electronic device to receive a voice command from a user via the microphone, request, upon receiving the voice command, situation information from a first external electronic device based on device information and the voice command, and after receiving the situation information, transmit the situation information to a second external electronic device via the communication module, and receiving content corresponding to the situation information from the second external electronic device and reproducing the received content.

Method for providing content and electronic device supporting the same

Dishwasher

Growing community of inventors

Seoul, South Korea

Byungsoo Kim