Samsung Electronics Co., Ltd.

Seoul National University

Byungse So

Dongjin Lee

Young-Goo Ko

Hyuck-Sun Kwon

Taek-Sung Kim

Janghwan Kim

Donghyun Song

Hwan-Jin Yong

Kyoungsub Oh

Byungjin Ahn

Kwangho Kim

Min-Ho Kim

Kwang-Ho Kim

Jong-Soo Seo

Min-ho Kim

Donggi Lee

Taesung Jung

Jinhyuk Kim

Duckhyun Chang

Kwan-Jong Park

Bryan Suk Joon Kim

Tae-Hwa Yoo

Jong-gyu Park

Kwanjong Park

Jongsoo Seo

Taehwa Yoo

SangLyul Min

A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).

Auxiliary power supply and user device including the same

Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.

Memory device and program method thereof

Growing community of inventors

Seongnam-si, South Korea

Byungse So