Lg Electronics Inc.

Korea Institute of Science and Technology

Samsung Electronics Co., Ltd.

Amotron Co., Ltd.

Amecs Co., Ltd.

Yuyu Co., Ltd.

ByungKyu Kim

Inkoo Shim

Hansoo Kim

Byunglok Jeon

Jong-Oh Park

Jinhee Kim

Soo Hyun Kim

Eunji Kim

Seungwoo Paek

Sewon Chun

Sanghyeun Son

Yeh-Sun Hong

Seunghwan Song

Romain Diboine

Sangjun Park

Sungdong Cho

Tae-Song Kim

Joon Suk Kim

Youngbum Woo

Seunghak Lee

Uidam Jung

Young Mo Lim

YounKoo Jeong

Diboine Romain

Kyoung-Dae Kim

Jisang Park

Jinhee Lee

Paolo Dario

Taeil Kim

Donghoon Kim

Kugsun Hong

Dongwan Kim

Sooncheun Byun

Hyukjoon Yoon

Seoyong Cho

Jongwoon Moon

Hyojong Lee

Taeguen Kim

Hun-Young Lim

Deukyang Kim

Jae-Wook Ryu

Boris Bazarov

YoungHun Tak

Siyoung Song

Taesong Kim

Young Jae Lee

Display for automobile interior

Automobile

A semiconductor chip structure includes a first semiconductor chip that includes a first chip region and a first scribe lane region and a second semiconductor chip that includes a second chip region and a second scribe lane region respectively bonded to the first chip region and the first scribe lane region. The first semiconductor chip includes a first bonding wiring layer that includes a first bonding insulating layer and a first bonding electrode in the first bonding insulating layer. The second semiconductor chip includes a second bonding wiring layer that includes a second bonding insulating layer and a second bonding electrode in the second bonding insulating layer and a polishing stop pattern. The first bonding insulating layer and the first bonding electrode of the first bonding wiring layer are respectively hybrid bonded to the second bonding insulating layer and the second bonding electrode of the second bonding wiring layer.

Semiconductor chip structure

A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

Semiconductor device

Display panel for automobiles

Display screen for automobiles

A device including a first structure and a second structure is provided. The device includes a substrate, a peripheral circuit and first junction pads on the substrate; a first insulating structure surrounding side surfaces of the first junction pads; second junction pads contacting the first junction pads; a second insulating structure on the first insulating structure; a passivation layer on the second insulating structure; an upper insulating structure between the passivation layer and the second insulating structure; a barrier capping layer between the upper insulating structure and the passivation layer; conductive patterns spaced apart from each other in the upper insulating structure; a first pattern structure between the upper insulating structure and the second insulating structure; a stack structure between the second insulating structure and the first pattern structure, and including gate layers; and a vertical structure passing through the stack structure and including a data storage structure and a channel layer.

Device including first structure having peripheral circuit and second structure having gate layers

Growing community of inventors

Seoul, South Korea

ByungKyu Kim