Samsung Electronics Co., Ltd.

Byungkyu Cho

Sunghoi Hur

Kwang Soo Seol

Jungdal Choi

Changhyun Lee

Jaeduk Lee

Dohyun Lee

Albert Fayrushin

Changyun Lee

In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.

Memory semiconductor device and method of operating the same

Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern.

Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer

Provided is a local self-boosting method of a flash memory device including at least one string having memory cells respectively connected to wordlines. The local self-boosting method includes forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells. The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell.

Local self-boosting method of flash memory device and program method using the same

A channel pre-charge method of a nonvolatile memory device including a cell string includes pre-charging a channel of the cell string according to a first word line bias condition and pre-charging the channel of the cell string according to a second word line bias condition, different than the first word line bias condition.

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Seoul, South Korea

Byungkyu Cho