Intel Corporation

Cornell University

Byungki Jung

Jack T Kavalieros

Gilbert W Dewey

Willy Rachmady

Cheng-Ying Huang

Ulrich B Wiesner

Michael O Thompson

Aravind S Killampalli

Jay P Gupta

Prashant Wadhwa

Kwan Wee Tan

Caleb Barrett

Nishant Gupta

Kaiwen Hsu

Justin Railsback

Supanee Sukrittanon

A method providing direct access to porous three-dimensionally (3D) continuous polymer network structures and shapes by combining BCP-resol co-assembly with COlaser-induced transient heating. The COlaser source transiently heats the BCP-directed resol hybrid films to high temperatures at the beam position, inducing locally controlled resol thermopolymerization and BCP decomposition in ambient conditions. This enables shaping of BCP-directed porous resin structures with tunable 3D interconnected pores in a single process. Pore size can be varied from 10 nm to about 600 nm.

Porous resin structures

Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.

Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions

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Portland, OR, United States of America

Byungki Jung