Samsung Electronics Co., Ltd.

Byungjun Park

Changrok Moon

Jongcheol Shin

Junemo Koo

Namgil Kim

Sang-Hoon Kim

JungChak Ahn

Jinju Jeon

Changyong Um

Younghwan Choi

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Image sensors including conductive pixel separation structures

An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

Image sensor including a transparent conductive layer in a trench

A semiconductor device is described which includes a substrate, an interlayer insulating layer provided below the substrate and including a via pad therein, a through via located at least partially within a via hole passing through the substrate and a portion of the interlayer insulating layer, a connection pad on the substrate, and a pad isolation pattern formed in the substrate to be located around the connection pad and the through via. The pad isolation pattern includes a plurality of bent portions having protrusions and recesses when viewed from a top view. As a result, cracks may be prevented from forming or growing in the semiconductor device.

Semiconductor devices having pad isolation pattern

Image sensors including conductive pixel separation structures and methods of fabricating the same

An image sensor may include a device isolation structure defining a plurality of pixel regions in a substrate and a photoelectric conversion element formed in each of the pixel regions. The device isolation structure may include an insulating gapfill layer extending from an upper portion to a lower portion of the device isolation structure, a spacer provided at the upper portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate, and a lower impurity region provided at the lower portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate.

Image sensors

The method may include providing a first substrate, the first substrate including a sacrificial layer, an active layer having an image sensor circuit portion and an interconnection layer electrically connected to the image sensor circuit portion sequentially stacked; performing an edge-trimming process with respect to the first substrate to form an interconnection layer pattern, an active layer pattern and a sacrificial layer pattern; adhering the first substrate to a second substrate; removing the sacrificial layer pattern to expose the active layer pattern; and forming a transillumination layer to provide light to an image sensor portion on the active layer pattern.

Growing community of inventors

Yongin-si, South Korea

Byungjun Park